TITLE

CdTe metal-semiconductor field-effect transistors

AUTHOR(S)
Dreifus, D. L.; Kolbas, R. M.; Harris, K. A.; Bicknell, R. N.; Harper, R. L.; Schetzina, J. F.
PUB. DATE
September 1987
SOURCE
Applied Physics Letters;9/21/1987, Vol. 51 Issue 12, p931
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the first demonstration of CdTe metal-semiconductor field-effect transistors. These transistors were fabricated using n-type CdTe films grown by photoassisted molecular beam epitaxy. Using this new film deposition technique, it is possible to obtain highly activated n-type or p-type films suitable for device applications. In the present work, transistor structures with 5 or 100 μm gate lengths having channel dopings in the range from 2×1016 to 2×1017 cm-3 were fabricated and tested. The 5 μm gate devices have transconductances as large as 10 mS/mm and pinch-off voltages of 4.0 V.
ACCESSION #
9824253

 

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