Very low threshold planar buried heterostructure InGaAsP/InP laser diodes prepared by three-stage metalorganic chemical vapor deposition

Ishiguro, H.; Kawabata, T.; Koike, S.
September 1987
Applied Physics Letters;9/21/1987, Vol. 51 Issue 12, p874
Academic Journal
Low threshold InGaAsP/InP lasers with planar buried heterostructure were grown entirely by low-pressure metalorganic chemical vapor deposition (MOCVD). The threshold current Ith=10 mA and the differential quantum efficiency ηd =60%, which are comparable to lasers grown by liquid phase epitaxy, were obtained. Most lasers randomly selected from one wafer have threshold currents of Ith=10–25 mA, because of high thickness uniformity of MOCVD growth. Stable fundamental transverse mode operation was also obtained up to an output power of 40 mW/facet, due to controlling the active layer width less than 2 μm.


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