Thermal donor formation in silicon: A new kinetic model based on self-interstitial aggregation

Mathiot, D.
September 1987
Applied Physics Letters;9/21/1987, Vol. 51 Issue 12, p904
Academic Journal
A new kinetic model is presented for the formation of thermal donors near 450 °C in oxygen-rich silicon. This model is based on the aggregation of the self-interstitials generated by the early stage of oxygen precipitation. Good agreement is obtained with published experimental kinetics, and the model is able to account for several other observations, such as the influence of carbon.


Related Articles

  • Oscillatory �Reactions� Involving the Oxygen and Carbon Background Impurities in Silicon Undergoing Heat Treatment. Lukjanitsa, V. V. // Semiconductors;May2001, Vol. 35 Issue 5, p491 

    The effect of the heat treatment (for 1 h at 750-1100�C) of silicon on the transport of the oxygen and carbon impurities between the impurity-defect clusters, which are present in dislocation-free n-Si crystals, and the crystal matrix was studied. The observed nonmonotonic variations of...

  • Atomistic simulations of extrinsic defects evolution and transient enhanced diffusion in silicon. Colombeau, B.; Cristiano, F.; Altibelli, A.; Bonafos, C.; Assayag, G. Ben; Claverie, A. // Applied Physics Letters;2/12/2001, Vol. 78 Issue 7, p940 

    In this letter, a physically based model describing the kinetic evolution of extrinsic defects during annealing is presented. The fundamental concepts of Ostwald ripening and formation energy of extrinsic defects are combined in this model, which has been tested against some classical...

  • Thermal expansion of the hexagonal (4H) polytype of SiC. Li, Z.; Bradt, R. C. // Journal of Applied Physics;7/15/1986, Vol. 60 Issue 2, p612 

    Presents information on a study which measured thermal expansion of the hexagonal (4H) polytype of silicon carbon by x-ray diffraction technique. Analysis of the expression for the principal axial coefficients of thermal expansion; Methodology of the study; Results and discussion.

  • Thin SiO2 insulators grown by rapid thermal oxidation of silicon. Moslehi, Mehrdad M.; Shatas, Steven C.; Saraswat, Krishna C. // Applied Physics Letters;12/15/1985, Vol. 47 Issue 12, p1353 

    Rapid thermal oxidation of 〈100〉 silicon in dry oxygen ambient has been performed in a lampheated rapid thermal processing system. For the first time we report fairly extensive experimental results on the initial regime of thermal oxidation of silicon by the rapid thermal oxidation...

  • Resistivity of linear scratches in doped (100) n-type single-crystal silicon. Danyluk, Steven; Lee, Soo-Wohn; Ahn, Ji-Hong; Kahn, Arnold // Journal of Applied Physics;5/1/1988, Vol. 63 Issue 9, p4568 

    Presents results of four-point probe measurement of linear, single scratches formed in silicon which is heated to an elevated isothermal temperature. Discussion on the processing of single-crystal silicon into electronic devices; Description of a linear drive stepper motor and a worm gear...

  • On the relaxational characteristics and stability of a Si:H films grown at high temperatures. Kurova, I. A.; Ormont, N. N.; Golikova, O. A.; Kudoyarova, V. Kh. // Semiconductors;May97, Vol. 31 Issue 5, p452 

    Some characteristics of the photo- and thermal stability in a-Si:H films, which were deposited in a triode reactor at 300-390 �C and which possess different hydrogen concentrations C[sub H], have been investigated. It has been found that the equilibration temperature T[sub E], increases as...

  • Control of thermocapillary convection in a liquid bridge by vibration. Anilkumar, A. V.; Grugel, R. N.; Shen, X. F.; Lee, C. P.; Wang, T. G. // Journal of Applied Physics;5/1/1993, Vol. 73 Issue 9, p4165 

    Presents a study that employed a novel nonintrusive vibration technique to offset thermocapillary convection in a model half-zone of silicon oil. Experimental apparatus and technique; Result of the study; Conclusion.

  • Temperature evolution during scanning electron beam processing of silicon. Cervera, M.; Martínez, J.; Garrido, J.; Piqueras, J. // Applied Physics A: Materials Science & Processing;1996, Vol. 62 Issue 5, p451 

    Temperature profile evolutions produced by a scanning electron beam in crystalline silicon have been numerically calculated using a two-dimensional finite-element scheme. The temperature dependence of the different silicon properties as well as the electron penetration effects have been taken...

  • Metastable thermal donor states in silicon. Chantre, Alain // Applied Physics Letters;5/25/1987, Vol. 50 Issue 21, p1500 

    Deep level transient spectroscopy has been applied to the study of defects introduced in silicon by short heat treatments at 450 °C. The behavior of an electron trap at Ec-0.15 eV is shown to provide strong evidence for the bistable nature of small thermal donor clusters.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics