TITLE

Thermal donor formation in silicon: A new kinetic model based on self-interstitial aggregation

AUTHOR(S)
Mathiot, D.
PUB. DATE
September 1987
SOURCE
Applied Physics Letters;9/21/1987, Vol. 51 Issue 12, p904
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A new kinetic model is presented for the formation of thermal donors near 450 °C in oxygen-rich silicon. This model is based on the aggregation of the self-interstitials generated by the early stage of oxygen precipitation. Good agreement is obtained with published experimental kinetics, and the model is able to account for several other observations, such as the influence of carbon.
ACCESSION #
9824215

 

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