Thermal donor formation in silicon: A new kinetic model based on self-interstitial aggregation

Mathiot, D.
September 1987
Applied Physics Letters;9/21/1987, Vol. 51 Issue 12, p904
Academic Journal
A new kinetic model is presented for the formation of thermal donors near 450 °C in oxygen-rich silicon. This model is based on the aggregation of the self-interstitials generated by the early stage of oxygen precipitation. Good agreement is obtained with published experimental kinetics, and the model is able to account for several other observations, such as the influence of carbon.


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