TITLE

Incorporation of boron during thermal chemical vapor deposition of doped hydrogenated amorphous silicon

AUTHOR(S)
Branz, Howard M.; Flint, John H.; Harris, Christopher J.; Haggerty, John S.; Adler, David
PUB. DATE
September 1987
SOURCE
Applied Physics Letters;9/21/1987, Vol. 51 Issue 12, p922
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report investigations of B incorporation during the growth of B-doped hydrogenated amorphous silicon (a-Si:H) thin films by laser-induced chemical vapor deposition (CVD) from mixtures of SiH4 and B2H6. Because B2H6 decomposition is very rapid, nearly all the B admitted into the reaction cell is incorporated in the growing film and the B concentration in the solid is B2H6 flow rate limited rather than controlled by the gas phase dopant concentration. Widely varying B-incorporation efficiencies reported for B-doped a-Si:H grown by a variety of thermal CVD techniques are summarized and explained.
ACCESSION #
9824210

 

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