Incorporation of boron during thermal chemical vapor deposition of doped hydrogenated amorphous silicon

Branz, Howard M.; Flint, John H.; Harris, Christopher J.; Haggerty, John S.; Adler, David
September 1987
Applied Physics Letters;9/21/1987, Vol. 51 Issue 12, p922
Academic Journal
We report investigations of B incorporation during the growth of B-doped hydrogenated amorphous silicon (a-Si:H) thin films by laser-induced chemical vapor deposition (CVD) from mixtures of SiH4 and B2H6. Because B2H6 decomposition is very rapid, nearly all the B admitted into the reaction cell is incorporated in the growing film and the B concentration in the solid is B2H6 flow rate limited rather than controlled by the gas phase dopant concentration. Widely varying B-incorporation efficiencies reported for B-doped a-Si:H grown by a variety of thermal CVD techniques are summarized and explained.


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