TITLE

High-quality amorphous silicon germanium produced by catalytic chemical vapor deposition

AUTHOR(S)
Matsumura, Hideki
PUB. DATE
September 1987
SOURCE
Applied Physics Letters;9/14/1987, Vol. 51 Issue 11, p804
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
High-quality amorphous silicon germanium (a-SiGe:H) films are produced by a new ‘‘catalytic chemical vapor deposition (CTL CVD)’’ method. In the method, a SiH4, GeH4, and H2 gas mixture is decomposed without using any plasmas or photochemical excitation, but using only the thermal or the catalytic reaction with a heated tungsten catalyzer. Photoconductive properties of CTL CVD a-SiGe:H are apparently not degraded as the Ge content increases. The photoconductivity and the photosensitivity for AM-1 of 100 mW/cm2 are 10-5–10-4 (Ω cm)-1 and 104, respectively, even for the sample of optical band gap of 1.40–1.45 eV.
ACCESSION #
9824198

 

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