Tunnel spectroscopy using titanium metal barriers on p--Si/p+-Si molecular beam epitaxial films

Cabanski, W.; Schulz, M.; Kasper, E.; Herzog, H. J.
September 1987
Applied Physics Letters;9/14/1987, Vol. 51 Issue 11, p811
Academic Journal
Tunnel spectroscopy is employed to analyze electronic and vibrational excitations in Ti/p--Si/p+-Si structures. The thin p--Si layer of about 70 Å thickness was grown by molecular beam epitaxy (MBE). The second derivative of the tunneling current through the Ti/p--Si Schottky barrier is measured at a temperature T=8 K. A series of peaks is observed in the voltage range 0 to ±80 mV. The observed structure is interpreted by inelastic tunneling via phonons. Impurity states of Ga-x(E-Ev=57 meV), Ga+(E-Ev=2 meV), B(E-Ev=46 meV), and B-x(E-Ev=37 meV) in Si can be resolved at the interface of the MBE films. The method may be also useful to analyze interface states at the metal-semiconductor interface.


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