TITLE

Perpendicular electronic transport in doping superlattices

AUTHOR(S)
Schubert, E. F.; Cunningham, J. E.; Tsang, W. T.
PUB. DATE
September 1987
SOURCE
Applied Physics Letters;9/14/1987, Vol. 51 Issue 11, p817
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Electronic transport measurements are performed at 77 and 300 K on doping superlattices in perpendicular direction to the quantum well planes. The periods of the doping superlattices range from 150 to 600 Ã…. The current-voltage characteristics in long period doping superlattices (type B) are strongly nonlinear and exhibit a new type of negative differential conductivity. The occurrence of negative differential conductivity is caused by avalanche multiplication in the high-field regions of the superlattice and accumulation of holes in the valence-band maxima. In short period doping superlattices (type A) the current-voltage characteristics are linear at temperatures of 300 and 77 K showing that tunneling through thin barriers dominates perpendicular transport. The calculation of the tunneling current yields a strong dependence on the period (exp-z3/2p).
ACCESSION #
9824187

 

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