High-fluence ion damage effects in Ar-implanted (InGa)As/GaAs strained-layer superlattices

Myers, D. R.; Arnold, G. W.; Hills, C. R.; Dawson, L. R.; Doyle, B. L.
September 1987
Applied Physics Letters;9/14/1987, Vol. 51 Issue 11, p820
Academic Journal
We have characterized (InGa)As/GaAs strained-layer superlattices (SLS’s) that have been implanted with 300 keV argon ions at room temperature for fluences sufficient to induce precipitous stress relief in the implanted composite. SLS compositional modulation is lost due to ion beam mixing over much of the ion range; however, the implanted regions remain crystalline despite extensive damage near the mean ion range. High-density dislocation networks are found near the substrate-buffer interface after precipitous stress relief and are correlated with the occurrence of the effect.


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