Chemical beam epitaxially grown InP/InGaAsP interference mirror for use near 1.55 μm wavelength

Tai, K.; McCall, S. L.; Chu, S. N. G.; Tsang, W. T.
September 1987
Applied Physics Letters;9/14/1987, Vol. 51 Issue 11, p826
Academic Journal
An interference mirror for use near 1.55 μm wavelength was constructed using InP and lattice-matched InGaAsP on an InP substrate with chemical beam epitaxy methods. The maximum reflectivity was 92.5% at 1.46 μm. The design value was 94.75% at 1.55 μm. The mirror was used as an output mirror in a synchronously pumped mode-locked Tl:KCl color center laser.


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