Doping superlattices grown in channeled GaAs substrates by molecular beam epitaxy through a built-in shadow mask

Hasnain, G.; Mars, D.; Döhler, G. H.; Ogura, M.; Smith, J. S.
September 1987
Applied Physics Letters;9/14/1987, Vol. 51 Issue 11, p831
Academic Journal
Micron width doping superlattices or n-i-p-i structures with grown-in interdigital highly selective contacts are grown successfully in a channeled GaAs substrate by molecular beam epitaxy (MBE) through a built-in shadow mask. Excellent diode characteristics and efficient lateral injection electroluminescence demonstrate the high quality of the masked MBE growth in the channeled substrate.


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