Tunneling and transverse wave vector conservation in GaAs/AlGaAs heterostructures

Lebens, John A.; Silsbee, Robert H.; Wright, Steven L.
September 1987
Applied Physics Letters;9/14/1987, Vol. 51 Issue 11, p840
Academic Journal
We have studied transverse wave vector conservation in the tunneling of electrons between a quantum well and an n+ electrode while varying the density of electrons in the well. The sample is a ‘‘tunnel capacitor’’ structure in which a GaAs well is separated by an AlGaAs tunnel barrier from the bottom n+ electrode and by a much thicker AlGaAs barrier from the top n+ electrode. In a regime where the transverse wave vector cannot be conserved in the absence of scattering, we present a model that includes scattering effects and show that it agrees with our experimental data and can be used to draw some conclusions about the efficacy of spacer layers to reduce these scattering effects.


Related Articles

  • Tunneling escape time of electrons from a quantum well with gamma-X mixing effect. Yumin Zhang; Houzhi Zheng // Applied Physics Letters;8/22/1994, Vol. 65 Issue 8, p1036 

    Calculates the tunneling escape time of electrons from a quantum well with gamma-X mixing effect using the envelope function method. Adoption of a simplified interface matrix to describe the gamma-X mixing effect; Effect of the resonance of the gamma state in the well with the X state in the...

  • Negative submillimeter absorption in tunnel-coupled quantum wells under resonant infrared excitation. Vasko, F.T.; Soldatenko, Yu. N. // Applied Physics Letters;1/30/1995, Vol. 66 Issue 5, p544 

    Examines the redistribution of electrons between the tunnel-coupled ground levels in double quantum wells (DQW) caused by the resonant infrared excitation. Factors attributing the relaxation of photoexcited electrons; Function of DQW parameters; Inversion of populations in the tunnel-coupled...

  • Quasi-ballistic resonant tunneling of minority electrons into the excited states of a quantum well. Vengurlekar, A. S.; Capasso, F.; Sen, S.; Hutchinson, A. L.; Chu, S. N. G.; Sivco, D.; Cho, A. Y. // Applied Physics Letters;12/11/1989, Vol. 55 Issue 24, p2529 

    Observation of energy-dependent transmission of nonequilibrium minority electrons through a symmetric double-barrier (DB) quantum well heterostructure is reported. The DB is placed in the base of a GaInAs/AlInAs bipolar transistor. The electrons are launched into the DB with variable kinetic...

  • Nonresonant electron and hole tunneling times in GaAs/Al0.35Ga0.65As asymmetric double quantum wells. Nido, M.; Alexander, M. G. W.; Rühle, W. W.; Schweizer, T.; Köhler, K. // Applied Physics Letters;1/22/1990, Vol. 56 Issue 4, p355 

    Nonresonant carrier tunneling is investigated by time-resolved and time-averaged optical methods for a series of samples with various barrier thicknesses. The electron tunneling times decrease exponentially with the decrease of barrier thickness from 8 to 3 nm, and the trend is well described by...

  • Lifetime of the quasi-bound state in the quantum well in a double-barrier structure with a localized imaginary potential. Kan, S. C.; Yariv, A. // Journal of Applied Physics;2/15/1990, Vol. 67 Issue 4, p1957 

    Presents a study that proposed a model for electron tunneling in a quantum well of a double-barrier structure with localized recombination channel using localized imaginary potential. Examination of the properties of nonhermitanian Hamiltonians; Calculation of the lifetime of the quasi-bound...

  • Change in density of states in a resonant tunneling structure due to a scattering center in the well. Pandey, L. N.; George, Thomas F.; Rustgi, M. L.; Sahu, D. // Journal of Applied Physics;12/1/1990, Vol. 68 Issue 11, p5724 

    Presents a study which examined the change in density of states in a resonant tunneling structure (RTS) due to a scattering center in the quantum well. Impact of an increase in thin barrier on the energies of resonance states; Approaches to the study of electronic density of states of RTS;...

  • Observation of charge storage and intersubband relaxation in resonant tunneling via a high sensitivity capacitive technique. Schubert, E. F.; Capasso, Federico; Hutchinson, A. L.; Sen, S.; Gossard, A. C. // Applied Physics Letters;12/24/1990, Vol. 57 Issue 26, p2820 

    In suitably designed resonant tunneling double barriers the capacitance-voltage curve exhibits well-defined features corresponding to the charging and discharging of the quantum well. From the bias dependence of the electron density in the well we find that in our thick parabolic wells,...

  • Investigating the cubic anisotropy of the confined hole subbands of an AlAs/GaAs/AlAs quantum.... Hayden, R.K.; Eaves, L. // Applied Physics Letters;7/6/1992, Vol. 61 Issue 1, p84 

    Investigates the cubic anisotropy of the confined hole subbands of an aluminum-arsenide/gallium-arsenide/aluminum-arsenide quantum well. Principle of resonant magnetotunneling spectroscopy; Technique for measuring the valence-band structure; Effects of the finite electric field in the quantum well.

  • Nonresonant tunneling in InGaP/InAlP asymmetric double quantum wells. Buccafusca, O.; Chilla, J.L.A.; Menoni, C.S.; Rocca, J.J.; Hafich, M.J.; Woods, L.M.; Robinson, G.Y. // Applied Physics Letters;1/25/1993, Vol. 62 Issue 4, p399 

    Examines the nonresonant tunneling in indium gallium phosphide/indium aluminum phosphide asymmetric double quantum wells. Determination of photoexcited carrier density and tunneling rates; Dominance of impurity scattering in nonresonant tunneling; Relation of photoluminescence decay time to...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics