TITLE

High acceptor production rate in electron-irradiated n-type GaAs: Impact on defect models

AUTHOR(S)
Look, D. C.
PUB. DATE
September 1987
SOURCE
Applied Physics Letters;9/14/1987, Vol. 51 Issue 11, p843
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Defect production rates have been studied in electron-irradiated GaAs by temperature-dependent Hall-effect (TDH) measurements. The TDH results agree well with deep level transient spectroscopy (DLTS) results for the well-known electron traps E1, E2, and E3, but conclusively demonstrate a much higher production rate (4±1 cm-1) of acceptors below E3 than the total of all other DLTS traps. These findings strongly affect current defect models, and, e.g., are consistent with the existence of Ga sublattice damage, not seen before.
ACCESSION #
9824172

 

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