TITLE

Oxygen precipitation in heavily boron-doped silicon crystals

AUTHOR(S)
Tsai, H. L.; Stephens, A. E.; Meyer, F. O.
PUB. DATE
September 1987
SOURCE
Applied Physics Letters;9/14/1987, Vol. 51 Issue 11, p849
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Transmission electron microscopy was applied to study oxygen precipitation in P+ wafers by comparison with that in P- wafers grown in the same puller under the same growth schedule. Besides the higher precipitate density in P+ wafers for all heat treatments, it was shown that nucleation centers can be easily re-established in P+ wafers at a low temperature after a prior denuding anneal. The precipitate morphology was found to depend on the precipitate growth rate and/or the presence of impurities. The morphology evolution from a small polyhedron to a large plate during the precipitate growth is proposed to explain the observed shapes.
ACCESSION #
9824169

 

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