TITLE

Scattering in low-loss GaAs/AlGaAs rib waveguides

AUTHOR(S)
Deri, R. J.; Kapon, E.; Schiavone, L. M.
PUB. DATE
September 1987
SOURCE
Applied Physics Letters;9/14/1987, Vol. 51 Issue 11, p789
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Single-mode rib waveguides with low propagation loss (0.2 dB/cm) were fabricated on GaAs/AlGaAs single heterostructures by dry etching. The attenuation of these guides was measured to study the effect of rib structure on propagation loss at 1.52 μm. An increase in loss with increased rib height and decreased rib width was associated with scattering due to a rib surface roughness of approximately 50 nm for ion milled waveguides. Fabrication with reactive ion etching reduced the rib roughness and its associated scattering loss by a factor of 3 or more in waveguides with strong optical confinement (effective index difference of 0.012) of the fundamental guided mode.
ACCESSION #
9824153

 

Related Articles

  • Laser fabricated GaAs waveguiding structures. Willner, A. E.; Ruberto, M. N.; Blumenthal, D. J.; Podlesnik, D. V.; Osgood, R. M. // Applied Physics Letters;5/8/1989, Vol. 54 Issue 19, p1839 

    We have applied the technique of laser-induced etching to fabricate rib waveguides on a GaAs/AlGaAs heterostructure system. Light confinement of these guides was controlled by varying the depth of the etched trenches. Additionally, we have demonstrated directional couplers and two-level...

  • GaAs/AlGaAs single-mode optical waveguides with low propagation loss and strong optical confinement. Seto, M.; Shahar, A.; Deri, R. J.; Tomlinson, W. J.; Yi-Yan, A. // Applied Physics Letters;3/12/1990, Vol. 56 Issue 11, p990 

    Singe-mode optical waveguides have been fabricated with a saturated bromine water etchant using single-heterostructure GaAs/AlGaAs epitaxial material, with propagation losses as low as 0.6 dB/cm for 1.66 μm deeply etched ribs (Δneff[bar_over_tilde:_approx._equal_to]2.4) and losses below...

  • Noninteracting beams of ballistic two-dimensional electrons. Spector, J.; Stormer, H.L.; Baldwin, K.W.; Pfeiffer, L.N.; West, K.W. // Applied Physics Letters;1/21/1991, Vol. 58 Issue 3, p263 

    Demonstrates that two beams of two-dimensional ballistic electrons in gallium arsenide (GaAs)-aluminum GaAs (AlGaAs) heterostructure can penetrate each other with negligible mutual interaction analogous to the penetration of two optical beams. Geometry employed to demonstrate noninteracting...

  • Photoresponse of asymmetrically doped GaAs-AlAs heterostructures under external bias. Woodward, T. K.; McGill, T. C.; Burnham, R. D. // Journal of Applied Physics;11/15/1986, Vol. 60 Issue 10, p3755 

    Examines the photocurrent behavior of assymetrically doped gallium arsenide (GaAs)-aluminum arsenide (AlAs)-GaAs heterostructures characterized by thick AlAs barriers. Photocurrent per incident photo data as a function of incident light energy; Association between the shape of the photocurrent...

  • X-valley tunneling in single AlAs barriers. Boykin, Timothy B.; Harris, James S. // Journal of Applied Physics;8/1/1992, Vol. 72 Issue 3, p988 

    Presents a study that examined tunneling through gallium arsenide (GaAs)/aluminum-arsenic/GaAs single-barrier heterostructures of varying widths using a tight-binding model. Examination of the role of nonzero wave vector parallel to the interface on tunneling; Information on the current-voltage...

  • Diffusion-enhanced epitaxial growth of thickness-modulated low-loss rib waveguides on patterned GaAs substrates. Colas, E.; Shahar, A.; Tomlinson, W. J. // Applied Physics Letters;3/5/1990, Vol. 56 Issue 10, p955 

    Rib waveguides have been fabricated without any post-crystal growth processing steps. The ribs are defined by the two nongrowth (111)B surfaces that develop at each edge of (011) mesas on a patterned GaAs substrate during organometallic chemical vapor deposition (OMCVD) of GaAs/AlGaAs...

  • Investigation of the properties of organometallic vapor phase epitaxially grown AlGaAs/GaAs heterostructures using Raman scattering. Shealy, J. R.; Schaus, C. F.; Wicks, G. W. // Applied Physics Letters;7/15/1985, Vol. 47 Issue 2, p125 

    The growth of AlGaAs/GaAs heterostructures by low pressure organometallic vapor phase epitaxy was studied using Raman spectroscopy on a series of multilayer structures. Growth conditions were chosen to allow the investigation of the effects of growth rate and growth interruption during the...

  • Mobility degradation in a quantum well heterostructure of a GaAs/AlGaAs prototype. Arora, Vijay K.; Mui, David S. L.; Morkoç, H. // Applied Physics Letters;4/20/1987, Vol. 50 Issue 16, p1080 

    Mobility degradation of a quasi-two-dimensional electron gas in a high electric field as shown to arise from the asymmetry in the distribution function of electrons. The critical field for the onset of appreciable mobility degradation is given by ε*=kBT/el=vsat/2μ0, where T is the lattice...

  • Stable and unstable current-voltage measurements of a resonant tunneling heterostructure oscillator. Shewchuk, T. J.; Gering, J. M.; Chapin, P. C.; Coleman, P. D.; Kopp, W.; Peng, C. K.; Morkoç, H. // Applied Physics Letters;11/1/1985, Vol. 47 Issue 9, p986 

    Microwave oscillations in double barrier GaAs-AlxGa1-xAs resonant tunneling heterostructures have been investigated. In this letter an approach is presented to obtain stable, dc current-voltage (I-V) curves by using a damped microwave circuit to prevent device oscillations which distort the...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics