TITLE

Design of optimized high-speed depletion-edge-translation optical waveguide modulators in III-V semiconductors

AUTHOR(S)
Coldren, L. A.; Mendoza-Alvarez, J. G.; Yan, R. H.
PUB. DATE
September 1987
SOURCE
Applied Physics Letters;9/14/1987, Vol. 51 Issue 11, p792
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A new first-principle theory that includes the higher order field and carrier effects in semiconductor waveguide refractive index modulators has been developed. For the first time, the relative importance of the electrorefractive, band filling, linear electro-optic, and plasma effects is shown. The theory agrees well with measurements from experimental AlGaAs/GaAs depletion-edge-translation (DET) phase modulators that have given record levels of phase shift per volt per unit length, and it suggests an improved DET device design with much larger phase shifting efficiency. The required drive voltage/bandwidth figure of merit, Vπ/ Δf, for this configuration (without including quantum wells) is lower than for any other existing optical index modulator.
ACCESSION #
9824150

 

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