Structural and compositional integrity of lattice-matched ZnSe0.95S0.05 on (100) orientated GaAs

Yates, Heather M.; Williams, John O.
September 1987
Applied Physics Letters;9/14/1987, Vol. 51 Issue 11, p809
Academic Journal
Lattice-matched ZnSe0.95S0.05 epitaxial layers have been grown on (100) oriented GaAs substrates by atmospheric pressure metalorganic vapor phase epitaxy. Blue room-temperature photoluminescence is observed and the interface is both compositionally and structurally abrupt as shown by secondary ion mass spectrometry and high-resolution transmission electron microscopy.


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