Improved β-SiC heteroepitaxial films using off-axis Si substrates

Powell, J. A.; Matus, L. G.; Kuczmarski, M. A.; Chorey, C. M.; Cheng, T. T.; Pirouz, P.
September 1987
Applied Physics Letters;9/14/1987, Vol. 51 Issue 11, p823
Academic Journal
All β-SiC films grown using on-axis (001) Si substrates that have been examined with transmission electron microscopy exhibit a high density of interfacial twins, stacking faults, and antiphase disorder. The antiphase boundaries can be decorated by chemical etching, sputter etching, wet oxidation, and β-SiC growth in the presence of diborane. All traces of antiphase disorder are eliminated when the heteroepitaxial growth is carried out on vicinal (001) Si substrates that are tilted 2° about a <110> axis. In addition, growth on the off-axis Si produces β-SiC films that are significantly smoother than on-axis films. The density of stacking faults is apparently unaffected by growth on the off-axis substrates.


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