Molecular beam epitaxial growth of III-V compound semiconductor in the presence of a low-energy ion beam: A Monte Carlo simulation study

Ogale, S. B.; Madhukar, A.; Thomsen, M.
September 1987
Applied Physics Letters;9/14/1987, Vol. 51 Issue 11, p837
Academic Journal
Monte Carlo simulation study of molecular beam epitaxial growth of III-V compound semiconductor in the presence of a low-energy ion beam is performed to examine the role of such physical parameters as beam induced preferential desorption and enhanced surface migration on the growth front morphology. It is demonstrated that the smoothness of the growth front can be controlled by appropriate choice of ion type, its energy, angle of incidence, and flux. Thus smooth morphology can be realized at temperatures significantly lower than normal epitaxial growth temperatures.


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