Reflection electron microscopic observation of high-temperature grown GaAs surfaces of molecular beam epitaxy

Shimizu, N.; Muto, S.
September 1987
Applied Physics Letters;9/7/1987, Vol. 51 Issue 10, p743
Academic Journal
We used reflection electron microscopy (REM) to observe GaAs (001) surfaces grown at 700 °C by molecular beam epitaxy. The REM images revealed such interesting features as high step density and large undulations that occurred even though we interrupted epitaxial growth for 3 min, in an attempt to produce a flat surface. A cross section of the large undulation showed a structure consisting almost entirely of plateaus, 0.1–2 μm wide and several monolayers high but less than 30 Å. Small steps distributed uniformly across the tops of these plateaus appeared comparatively straight in the [110] direction but appeared to ‘‘zigzag’’ in the [110] direction—a phenomenon we think may have been caused by Ga surface migration anisotropy.


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