TITLE

Variation of the critical layer thickness with In content in strained InxGa1-xAs-GaAs quantum wells grown by molecular beam epitaxy

AUTHOR(S)
Andersson, T. G.; Chen, Z. G.; Kulakovskii, V. D.; Uddin, A.; Vallin, J. T.
PUB. DATE
September 1987
SOURCE
Applied Physics Letters;9/7/1987, Vol. 51 Issue 10, p752
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The critical width Lc for misfit dislocation generation has been determined for molecular beam epitaxy grown strained InxGa1-xAs (0.1
ACCESSION #
9824110

 

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