Variation of the critical layer thickness with In content in strained InxGa1-xAs-GaAs quantum wells grown by molecular beam epitaxy

Andersson, T. G.; Chen, Z. G.; Kulakovskii, V. D.; Uddin, A.; Vallin, J. T.
September 1987
Applied Physics Letters;9/7/1987, Vol. 51 Issue 10, p752
Academic Journal
The critical width Lc for misfit dislocation generation has been determined for molecular beam epitaxy grown strained InxGa1-xAs (0.1


Related Articles

  • Photoluminescence studies of InGaAs/InAlAs strained double quantum wells. Shen, W. Z.; Shen, S. C.; Chang, Y.; Tang, W. G.; Chen, J. X.; Li, A. Z. // Journal of Applied Physics;11/1/1996, Vol. 80 Issue 9, p5348 

    Presents photoluminescence studies of InGaAs/InAlAs strained double quantum wells. Experimental details; Results and discussion; Conclusion.

  • Evidence of a blue shift in near surface ultra thin InAs/InP island like quantum wells. Sallese, J.M.; Carlin, J.F. // Applied Physics Letters;10/20/1997, Vol. 71 Issue 16, p2331 

    Presents evidence of blue shift in the photoluminescence spectra of indium arsenide (InAs)/indium phosphide (InP) island like quantum wells. Reduction of the InP top barrier layer thickness; Use of surface quantum wells to probe the near surface properties; Identification of individual...

  • Diffusion and relaxation of excess carriers in InGaN quantum wells in localized versus extended... Vertikov, A.; Ozden, I. // Journal of Applied Physics;10/15/1999, Vol. 86 Issue 8, p4697 

    Presents a study on the diffusivity of excess carriers in indium gallium nitride multiple quantum wells by near-field optical imaging of photoluminescence profiles. Experimental procedure; Results and discussion; Conclusion.

  • Highly strained 1.24-μm InGaAs/GaAs quantum-well lasers. Sung, L.W.; Lin, H.H. // Applied Physics Letters;8/11/2003, Vol. 83 Issue 6, p1107 

    Highly strained InGaAs/GaAs quantum wells grown at very low temperature (380 °C) have been studied. The critical thickness of the In[sub 0.38]Ga[sub 0.62]As quantum well is 8.8 nm and the photoluminescence peak is at 1.24 μm. An edge-emitting In[sub 0.388]Ga[sub 0.612]As/GaAs quantum-well...

  • Room-temperature random telegraph noise in luminescence from macroscopic InGaN clusters. Aoki, Takao; Nishikawa, Yukie; Kuwata-Gonokami, Makoto // Applied Physics Letters;2/19/2001, Vol. 78 Issue 8, p1065 

    We report on photoluminescence properties of individual macroscopically sized InGaN clusters that were formed in InGaN multiple quantum wells. Phase separation in InGaN results in the formation of clusters with a size of 1-2 μm with three different indium compositions. A small fraction (one...

  • Optical investigations of GaInNAs/GaAs multi-quantum wells with low nitrogen content. Sun, H. D.; Hetterich, M.; Dawson, M. D.; Egorov, A. Yu.; Bernklau, D.; Riechert, H. // Journal of Applied Physics;8/1/2002, Vol. 92 Issue 3, p1380 

    The optical properties of GaInNAs/GaAs multi-quantum wells were investigated by photoluminescence excitation (PLE) spectroscopy, as well as by photoluminescence (PL), under various excitation intensities and at various temperatures. The PLE spectra demonstrated pronounced excitonic features and...

  • Long-wavelength InGaAs quantum wells grown without strain-induced warping on InGaAs compliant... Jones, A.M.; Jewell, J.L.; Mabon, J.C.; Reuter, E.E.; Bishop, S.G.; Roh, S.D.; Coleman, J.J. // Applied Physics Letters;2/15/1999, Vol. 74 Issue 7, p1000 

    Reports on the measurement of long-wavelength photoluminescence from an InGaAs quantum well heterostructure deposited on disk-shaped InGaAs compliant-film membranes. Utilization of a single pedestal to suspend each compliant-film disk over a GaAs substrate; Cathodoluminescence (CL) spectra...

  • Photoluminescence studies on InGaN/GaN multiple quantum wells with different degree of localization. Hao, M.; Zhang, J.; Zhang, X. H.; Chua, S. // Applied Physics Letters;12/30/2002, Vol. 81 Issue 27, p5129 

    It has been found, by using photoluminescence (PL) studies, that both the localized states and nonradiative recombination centers in In[sub 0.06]Ga[sub 0.94]N/GaN multiple quantum wells (MQWs) can be greatly suppressed by inserting a monolayer of AlN before the growth of each well layer. While...

  • Optical detection of interwell-exciton transfer in In0.53Ga0.47As/InP quantum wells grown by chemical beam epitaxy. Sauer, R.; Harris, T. D.; Tsang, W. T. // Applied Physics Letters;4/20/1987, Vol. 50 Issue 16, p1077 

    We use photoluminescence excitation spectroscopy to show that excitons confined to single quantum wells in In0.53Ga0.47As/InP communicate through thin barriers. The experiments are performed on a sample grown by chemical beam epitaxy with four quantum wells of thicknesses between ∼18 and 60...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics