TITLE

Effect of As overpressure during annealing on the nonuniformity of activation efficiency in Si-implanted GaAs layer

AUTHOR(S)
Sato, Takashi; Tajima, Michio; Ishida, Koichi
PUB. DATE
September 1987
SOURCE
Applied Physics Letters;9/7/1987, Vol. 51 Issue 10, p755
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The effects of As overpressure during annealing on nonuniformity, i.e., the variations of sheet carrier concentration and Hall mobility across wafers, have been studied for Si-implanted undoped semi-insulating GaAs. The nonuniformity was found to be suppressed by annealing under high As overpressure. It is suggested that the high As overpressure suppresses the As vacancy generation during annealing which may induce the nonuniformity due to the local variation of compensation ratio of [SiAs]/[SiGa] around a dislocation.
ACCESSION #
9824108

 

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