2.2 μm GaInAsSb/AlGaAsSb injection lasers with low threshold current density

Caneau, C.; Zyskind, J. L.; Sulhoff, J. W.; Glover, T. E.; Centanni, J.; Burrus, C. A.; Dentai, A. G.; Pollack, M. A.
September 1987
Applied Physics Letters;9/7/1987, Vol. 51 Issue 10, p764
Academic Journal
Double heterostructure 2.2 μm wavelength lasers were fabricated from Ga0.84In0.16As0.15Sb0.85/ AlxGa1-xAs0.04Sb0.96 wafers grown by liquid phase epitaxy. These structures were grown with Al-rich confinement layers (x=0.4) for optical confinement and thin intermediate cladding layers (x=0.34) to relieve the strain resulting from the lattice mismatch of the Al-rich confinement layers with respect to the substrate and the active layer. A threshold current density as low as 1.7 kA/cm2 was obtained at room temperature.


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