Ellipsometric analysis of built-in electric fields in semiconductor heterostructures

Snyder, Paul G.; Oh, Jae E.; Woollam, John A.; Owens, R. E.
September 1987
Applied Physics Letters;9/7/1987, Vol. 51 Issue 10, p770
Academic Journal
Measurements of Franz–Keldysh (FK) effects in GaAs-AlxGa1-xAs heterostructures by variable angle of incidence spectroscopic ellipsometry are reported. The measured FK effects are due to the built-in band bending at the surface and heterointerfaces, with no externally applied bias or modulating voltage. The polarity of the FK line shape indicates whether the field is uniform or nonuniform (inhomogeneous) in the direction along the growth axis, while the linewidth is determined by the peak field strength. This information can be used to characterize the doping concentration in the AlxGa1-xAs layer.


Related Articles

  • Ellipsometric Study of Ultrathin Al[sub x]Ga[sub 1 — ][sub x]As Layers. Sukhorukova, M. V.; Skorokhodova, I. A.; Khvostikov, V. P. // Semiconductors;Jan2000, Vol. 34 Issue 1, p56 

    A method for rapid monitoring of the parameters of thin-layer semiconductor structures by ellipsometry is proposed. The results of ellipsometric analysis of the material thickness and composition distribution in Al[sub x]Ga[sub 1-x]As films grown by low- temperature liquid-phase epitaxy (LPE)...

  • Far-infrared-magneto-optic ellipsometry characterization of free-charge-carrier properties in highly disordered n-type Al[sub 0.19]Ga[sub 0.33]In[sub 0.48]P. Hofmann, T.; Schubert, M.; Herzinger, C. M.; Pietzonka, I. // Applied Physics Letters;5/19/2003, Vol. 82 Issue 20, p3463 

    For highly disordered n-type Al[sub 0.19]Ga[sub 0.33]In[sub 0.48]P grown lattice matched to an undoped GaAs substrate, using far-infrared-magneto-optic generalized ellipsometry, the room-temperature free-charge-carrier parameters effective mass m[sup *] = 0.12(0.01) m[sub 0], concentration N =...

  • cw surface-emitting grating-coupled GaAs/AlGaAs distributed feedback laser with very narrow beam divergence. Mitsunaga, Kazumasa; Kameya, Masaaki; Kojima, Keisuke; Noda, Susumu; Kyuma, Kazuo; Hamanaka, Koichi; Nakayama, Takashi // Applied Physics Letters;6/22/1987, Vol. 50 Issue 25, p1788 

    Room-temperature cw operation of a GaAs/AlGaAs surface-emitting grating-coupled distributed feedback laser is reported. By using a transverse junction stripe scheme which provides a window structure for the surface-emitted light, cw surface emission having a very narrow beam divergence angle of...

  • Staggered band alignments in AlGaAs heterojunctions and the determination of valence-band offsets. Dawson, P.; Wilson, B. A.; Tu, C. W.; Miller, R. C. // Applied Physics Letters;2/24/1986, Vol. 48 Issue 8, p541 

    Photoluminescence spectra from Al0.37Ga0.63As/AlAs multiple quantum well structures with staggered band alignments are presented which provide the first direct optical measure of the valence-band offset at a semiconductor heterojunction. The experiment takes advantage of the crossover occurring...

  • Intermixing of AlxGa1-xAs/GaAs superlattices by pulsed laser irradiation. Ralston, J.; Moretti, A. L.; Jain, R. K.; Chambers, F. A. // Applied Physics Letters;6/22/1987, Vol. 50 Issue 25, p1817 

    Intermixing of AlxGa1-xAs/GaAs superlattices is demonstrated utilizing laser pulses of a few nanosecond duration. Raman spectroscopy and sputter Auger profiling have been used to assess the degree of intermixing and residual damage in the laser irradiated samples. The results indicate that...

  • Kinetics of silicon-induced mixing of AlAs-GaAs superlattices. Mei, P.; Yoon, H. W.; Venkatesan, T.; Schwarz, S. A.; Harbison, J. P. // Applied Physics Letters;6/22/1987, Vol. 50 Issue 25, p1823 

    The intermixing of AlAs-GaAs superlattices has been investigated as a function of Si concentration following anneals in the range of 500 to 900 °C. The superlattice samples were grown by molecular beam epitaxy and the near surface layers were doped with silicon at concentrations of 2×1017...

  • Photocurrent resonances in short-period AlAs/GaAs superlattices in an electric field. Al�perovich, V. L.; Terekhov, A. S.; Tkachenko, V. A.; Tkachenko, O. A.; Moshegov, N. T.; Toropov, A. I.; Yaroshevich, A. S. // Physics of the Solid State;Jan99, Vol. 41 Issue 1, p143 

    The photocurrent was measured as a function of the external electric field in short-period AlAs/ GaAs superlattices for various photon energies. Transport resonances, whose positions do not depend on the photon energy, were observed in these dependences together with optical resonances due to...

  • Electron beam source molecular beam epitaxial growth of analog graded AlxGa1-xAs ballistic transistors. Malik, Roger J.; Levi, Anthony F. J. // Applied Physics Letters;2/22/1988, Vol. 52 Issue 8, p651 

    A new method has been developed for the growth of graded band-gap AlxGa1-xAs alloys by molecular beam epitaxy which is based upon electron beam evaporation of the group III elements. The metal fluxes are measured and feedback controlled using a modulated ion gauge sensor. The system is computer...

  • Phase-coupled two-dimensional AlxGa1-xAs-GaAs vertical-cavity surface-emitting laser array. Deppe, D. G.; van der Ziel, J. P.; Chand, Naresh; Zydzik, G. J.; Chu, S. N. G. // Applied Physics Letters;5/21/1990, Vol. 56 Issue 21, p2089 

    Data are presented demonstrating the optically coupled operation of a 3×3 two-dimensional array of AlxGa1-xAs-GaAs vertical-cavity surface-emitting lasers. Room-temperature threshold current for the array is 90 mA, with the device geometry allowing for light emission from the epitaxial side...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics