Effect of size nonuniformity on the absorption spectrum of a semiconductor quantum dot system

Wu, Wei-Yu; Schulman, J. N.; Hsu, T. Y.; Efron, Uzi
September 1987
Applied Physics Letters;9/7/1987, Vol. 51 Issue 10, p710
Academic Journal
The interband optical absorption of a nonuniform semiconductor quantum dot system is calculated. The effect of dot size variation on the resolvability of the absorption peaks is estimated. The dots are assumed to be cubic, with a size distribution described by a Gaussian function. It is shown that the total absorption spectrum of such a dot system depends strongly on the dot size distribution described by the parameter ξ, the ratio of the standard deviation of the dot size to the average dot size of the system. The range of ξ values for which the absorption peaks are resolvable is given.


Related Articles

  • Modeling and analysis of intraband absorption in quantum-dot-in-well mid-infrared photodetectors. Hong, B. H.; Rybchenko, S. I.; Itskevich, I. E.; Haywood, S. K.; Tan, C. H.; Vines, P.; Hugues, M. // Journal of Applied Physics;Feb2012, Vol. 111 Issue 3, p033713 

    Intraband absorption in quantum-dot-in-a-well (DWELL) mid-infrared photodetectors is investigated using photocurrent spectroscopy and computationally cost-effective modeling linked to experimental data. The DWELL systems are challenging for modeling the electronic structure, which involves both...

  • Intersubband transitions in asymmetric quantum wells with external electric field. Zhaoxu Liu; Jun Zhu; Sihua Ha // Applied Mechanics & Materials;2014, Issue 525, p170 

    The quantum-confined Stark effect on the optical absorption of intersubband transitions in an asymmetric AlxGa1-xN/In0.3Ga0.7N/GaN quantum wells is investigated by means of the density matrix formulism. The built-in electric field generated by the piezoelectric and spontaneous polarizations...

  • Optical nonlinear properties of InAs quantum dots by means of transient absorption measurements. Nakamura, H.; Nishikawa, S.; Kohmoto, S.; Kanamoto, K.; Asakawa, K. // Journal of Applied Physics;7/15/2003, Vol. 94 Issue 2, p1184 

    The optical nonlinear properties of self-assembled InAs/GaAs quantum dots (QDs) were experimentally verified by means of transient absorption measurements. A saturation pulse energy P[SUBs] of 13 fJ/μm[SUP2] and an absorption recovery time &tou;[SUBr] of 55 ps were obtained from transmission...

  • Determination of the density of states in quantum wells and quantum dot arrays by the capacitance-voltage method. Aleshkin, V. Ya.; Bekin, N. A.; Buyanova, M. N.; Murel’, A. V.; Zvonkov, B. N. // Semiconductors;Oct99, Vol. 33 Issue 10, p1133 

    The possibility of determining the electronic density of states in quantum wells and quantum dot arrays in heterostructures from the capacitance-voltage curve is investigated. In heterostructures fluctuations of the composition and geometrical dimensions play an important role. It is shown that...

  • An Active Lasing Region with a Quantum Well and a Quantum Dot Array. Evtikhiev, V. P.; Konstantinov, O. V.; Matveentsev, A. V. // Technical Physics Letters;Mar2001, Vol. 27 Issue 3, p248 

    A combined active lasing region of the new type, containing an In[sub 0.2]Ga[sub 0.8]As quantum well (QW) and a single-layer array of InAs quantum dots (QDs) located outside the QW, was studied. In this system, the QW accumulates the injected charge carriers and the QD array serves as a...

  • Optical spectroscopy of single InAs/InGaAs quantum dots in a quantum well. Kaiser, S.; Mensing, T.; Worschech, L.; Klopf, F.; Reithmaier, J. P.; Forchel, A. // Applied Physics Letters;12/23/2002, Vol. 81 Issue 26, p4898 

    We have grown self-assembled InAs quantum dots embedded in the center of an InGaAs quantum well by molecular-beam epitaxy. Using electron-beam lithography and wet etching techniques, small mesas with only a few quantum dots were fabricated. At room temperature, the quantum dots have an emission...

  • Coupled strained-layer InGaAs quantum-well improvement of an InAs quantum dot AlGaAs–GaAs–InGaAs–InAs heterostructure laser. Chung, T.; Walter, G.; Holonyak, N. // Applied Physics Letters;12/31/2001, Vol. 79 Issue 27, p4500 

    Data are presented showing that, besides the improvement in carrier collection, it is advantageous to locate strain-matching auxiliary InGaAs layers [quantum wells (QWs)] within tunneling distance of a single-quantum-dot (QD) layer of an AlGaAs–GaAs–InGaAs–InAs QD...

  • Comparison of radiative properties of InAs quantum dots and GaInNAs quantum wells emitting around 1.3 μm. Markus, A.; Fiore, A.; Ganie`re, J. D.; Oesterle, U.; Chen, J. X.; Deveaud, B.; Ilegems, M.; Riechert, H. // Applied Physics Letters;2/11/2002, Vol. 80 Issue 6, p911 

    The emission properties of self-assembled InAs quantum dots (QDs) and lattice-matched GaInNAs quantum wells (QWs) emitting around 1.3 μm were investigated by temperature-dependent and time-resolved photoluminescence (PL). The QDs have much higher PL efficiency at low excitation, but saturate...

  • Observation of quantum dot-like behavior of GaInNAs in GaInNAs/GaAs quantum wells. Xin, H. P.; Kavanagh, K. L.; Zhu, Z.Q.; Tu, C.W. // Applied Physics Letters;4/19/1999, Vol. 74 Issue 16, p2337 

    Reports on a quantum dot-like behavior of GaInNAs due to composition nonuniformity of N and In in GaInNAs/GaAs quantum wells (QW). Images of cross-sectional transmission electron microscopy; Effects of the rapid thermal annealing; Bimodality of the In and N composition fluctuation after annealing.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics