TITLE

Low-threshold disorder-defined buried-heterostructure AlGaAs diode lasers by anisotropic diffusion of laser-incorporated Si

AUTHOR(S)
Epler, J. E.; Burnham, R. D.; Thornton, R. L.; Paoli, T. L.
PUB. DATE
September 1987
SOURCE
Applied Physics Letters;9/7/1987, Vol. 51 Issue 10, p731
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In laser-assisted disordering of AlGaAs heterostructures, the Si impurity is locally incorporated with a scanned laser beam. A subsequent thermal diffusion disorders the crystal layer structure by impurity-induced disordering. Data are presented indicating that under certain conditions the Si diffusion is anisotropic and proceeds most rapidly along the plane of the active region. The shape of the anisotropic disordering front is well suited to fabricating low-threshold buried-heterostructure (BH) lasers. Data describing the characteristics of the first BH lasers fabricated using the anisotropic diffusion are presented. The minimum cw threshold current is 10 mA and the maximum power output is 75 mW.
ACCESSION #
9824082

 

Related Articles

  • Molecular beam epitaxy grown PbEuSeTe buried-heterostructure lasers with continuous wave operation at 195 K. Feit, Z.; Kostyk, D.; Woods, R. J.; Mak, P. // Applied Physics Letters;12/31/1990, Vol. 57 Issue 27, p2891 

    Lattice-matched buried-heterostructure (BH) PbEuSeTe lasers were fabricated using a two-stage molecular beam epitaxy growth procedure. Lasers with 4-μm-wide and 0.6-μm-thick buried PbTe and Pb0.9976Eu0.0024Se0.0034Te0.9966 active layers were grown. Record continuous wave (cw) operating...

  • Monolithic GaAs/AlGaAs diode laser/deflector devices for light emission normal to the surface. Windhorn, T. H.; Goodhue, W. D. // Applied Physics Letters;6/16/1986, Vol. 48 Issue 24, p1675 

    Light emission normal to the surface of a GaAs/AlGaAs wafer has been obtained by fabricating edge-emitting double-heterostructure diode lasers with a monolithic 45° deflector adjacent to one of the laser facets. The deflector and adjacent facet were formed by ion beam assisted etching, while...

  • Double-heterostructure GaAs/AlGaAs lasers on Si substrates with reduced threshold current and built-in index guiding by selective-area molecular beam epitaxy. Lee, Henry P.; Liu, Xiaoming; Wang, Shyh // Applied Physics Letters;3/12/1990, Vol. 56 Issue 11, p1014 

    We report successful fabrication of GaAs/Al0.26Ga0.74As double-heterostructure laser diodes grown on patterned Si substrates by molecular beam epitaxy. The patterned substrates consist of exposed Si stripes with widths ranging from 9 to 70 μm and surrounded by 900 Å of SiN films on both...

  • A laser diode system stabilized on the Caesium D2 line. Rovera, G. D.; Santarelli, G.; Clairon, A. // Review of Scientific Instruments;May94, Vol. 65 Issue 5, p1502 

    We describe a complete diode laser system siabilized at 852 nm on the D[sub 2] line of Cs with a linewidth narrower than 100 kHz. This system is intended to be employed for optical pumping, cooling, and detection of Cs atoms in atomic frequency standards. The square root of the Allan variance,...

  • Efficient Cr,Nd:Gd[sub 3]Sc[sub 2]Ga[sub 3]O[sub 12] laser at 1.06 mum pumped by visible.... Scheps, Richard // Applied Physics Letters;9/9/1991, Vol. 59 Issue 11, p1287 

    Examines the efficiency of Cr,Nd:GSGG laser pumped by visible GaInP/AlgaInP laser diodes. Demonstration of the continuous wave and long-pulse diode pumping; Measurement of the lowest threshold power; Value of the best slope efficiency obtained.

  • Single depressed-index cladding ridge waveguide laser with a low aspect ratio. Kahen, K.B.; Shantharama, L.G.; Shepherd, J.P.; Peterson, D.L. // Applied Physics Letters;3/22/1993, Vol. 62 Issue 12, p1317 

    Examines a ridge waveguide semiconductor laser diode with a low aspect ratio. Composition of the laser; Effect of the laser deployment on the transverse beam divergence; Measurement of transverse and lateral far-field divergences.

  • Array mode selection utilizing an external cavity configuration. Yaeli, Joseph; Streifer, William; Scifres, Donald R.; Cross, Peter S.; Thornton, Robert L.; Burnham, Robert D. // Applied Physics Letters;7/15/1985, Vol. 47 Issue 2, p89 

    We report operation of a ten-stripe, gain-guided, phase-locked diode laser in an external cavity configuration. The laser radiates in a single narrow (1°) lobe. Such lasers generally lase in the highest order array mode, L = 10, which radiates in a twin-lobe far-field pattern. With one...

  • High-order (ν>10) eigenmodes in ten-stripe gain-guided diode laser arrays. Hadley, G. R.; Hohimer, J. P.; Owyoung, A. // Applied Physics Letters;9/22/1986, Vol. 49 Issue 12, p684 

    We present a numerical model for a ten-stripe gain-guided diode laser array that predicts eigenmodes of order greater than the number of stripes. The existence of such high-order eigenmodes is confirmed by observing the near- and far-field emission patterns from free-running single-frequency...

  • Instabilities in external cavity injection lasers due to resonant self-pulsing. Phelan, P.; O’Gorman, J.; McInerney, J.; Heffernan, D. // Applied Physics Letters;12/1/1986, Vol. 49 Issue 22, p1502 

    Instabilities in self-pulsing semiconductor diode lasers in a long external ring cavity are reported. The frequency of the self-pulsations increases in discrete steps with the injection current and the light-current characteristic displays kinks at these steps. The observed frequencies are...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics