Growth of high-quality GaxIn1-xAsyP1-y by chemical beam epitaxy

Tsang, W. T.; Schubert, E. F.; Chiu, T. H.; Cunningham, J. E.; Burkhardt, E. G.; Ditzenberger, J. A.; Agyekum, E.
September 1987
Applied Physics Letters;9/7/1987, Vol. 51 Issue 10, p761
Academic Journal
GaxIn1-xAsyP1-y epilayers closely lattice matched, Δa/a≲5×10-4, have been reproducibly grown over the whole range of composition (y=2.2x, 1>y>0) by chemical beam epitaxy. The relative sticking coefficient (or equivalently the incorporation efficiency into the solid) of arsenic to phosphorus, i.e., SAs/SP was between 1.5 and 3 depending on the material composition. Such values indicate a very efficient incorporation of phosphorous in this process. Very intense efficient luminescence peaks due to excitonic transitions with linewidths full width at half-maximum as narrow as 3 meV were obtained. Such a linewidth corresponds closely to the intrinsic linewidth due to alloy broadening in GaInAsP alloys. Furthermore, the photoluminescence spectra revealed that the donor-to-acceptor pair recombination was nearly absent. Hall measurements on GaxIn1-xAsyP1-y epilayers lattice matched into InP at 300 and 77 K yielded electron mobility values that agreed closely with theoretical values calculated by using the one-phonon model and the electronegativity difference as the alloy scattering potential for layers with doping levels between 1×1015 cm-3 and 1×1016 cm-3. The 77 K electron mobilities ranged from 2.2×104 to 6.7×104 cm2/V s depending on the quaternary composition.


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