Electron mobility in p-GaAs by time of flight

Ahrenkiel, R. K.; Dunlavy, D. J.; Greenberg, D.; Schlupmann, J.; Hamaker, H. C.; MacMillan, H. F.
September 1987
Applied Physics Letters;9/7/1987, Vol. 51 Issue 10, p776
Academic Journal
The minority-carrier mobility of electrons in metalorganic chemical vapor deposition grown p-GaAs has been measured by a diffusion time-of-flight technique. Doping levels of 1×1017 and 2×1018 cm-3 were investigated. The measured mobilities were about 2900 and 1300 cm2/V s, respectively. The minority-carrier mobilities are lower than the expected majority-carrier mobilities at the same doping levels. The lower mobility is caused by heavy-hole scattering.


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