Evidence of interfacial melting during pulsed laser irradiation of Ni2Si on Si

Grimaldi, M. G.; Priolo, F.; Baeri, P.; Rimini, E.; Cullis, A. G.; Chew, N. G.
August 1987
Applied Physics Letters;8/31/1987, Vol. 51 Issue 9, p649
Academic Journal
Interfacial melting of thin (∼65 nm) Ni2Si films thermally grown on <111> Si has been observed after pulsed laser irradiation. Low-energy implanted Bi was used as a marker to detect surface melting. Rutherford backscattering spectrometry has shown that the energy density threshold for interfacial mixing was lower than the one at which changes in the Bi profile occurred. Cross-section transmission electron microscopy performed on those samples has shown the existence of a reacted layer, ∼20 nm, at the silicide/silicon interface while no change in the structure of the outermost 50 nm was observed. The reacted layer formed sharp interfaces with both the underlying silicon and the silicide. Interfacial melting has been related to the presence in the phase diagram of an eutectic between the compound and the pure silicon.


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