Resonant Raman scattering and exciton-optical phonon coupling in CdTe/(Cd,Mn)Te quantum wells

Chang, S.-K.; Nakata, H.; Nurmikko, A. V.; Gunshor, R. L.; Kolodziejski, L. A.
August 1987
Applied Physics Letters;8/31/1987, Vol. 51 Issue 9, p667
Academic Journal
Resonant Raman scattering at the E0 gap from longitudinal optical phonons in CdTe/(Cd,Mn)Te multiple quantum wells has been studied near the strain split n=1 exciton ground state. A large resonance enhancement is observed with distinct incoming and outgoing channels, in agreement with luminescence excitation spectra. Phonons are observed from CdTe wells and (Cd,Mn)Te barriers, indicative of small valence-band offsets for this superlattice system. At extreme resonance, striking linewidth broadening and damping effects for the alloy phonon modes are witnessed.


Related Articles

  • Pressure-induced resonance Raman scattering in Ga1-xInxAs/Ga1-yAlyAs strained quantum-well structures. Kourouklis, G. A.; Jayaraman, A.; People, R.; Sputz, S. K.; Maines, R. G.; Sivco, D. L.; Cho, A. Y. // Journal of Applied Physics;5/15/1990, Vol. 67 Issue 10, p6438 

    Examines pressure-induced resonance Raman Scattering (RRS) in strained quantum well structures. Details of experimental techniques used; Factor which causes RRS in quantum wells; Features of pressure-induced second-order phonon intensities in quantum wells.

  • Resonant Raman Scattering Spectra in a ZnCdSe/ZnSe Structure with a Quantum Well and Open Nanowires. Ka─▒byshev, V. Kh.; Travnikov, V. V.; Davydov, V. Yu. // Physics of the Solid State;Jul2003, Vol. 45 Issue 7, p1374 

    Resonance Raman scattering (RS) spectra of a ZnCdSe/ZnSe sample containing a single quantum well and quantum well-based open nanowires were studied at T = 300 K. The longitudinal optical (LO) phonons involved in the formation of the observed spectra of the quantum-well and nanowire regions...

  • Raman scattering resonant with excitons in CdZnTe/ZnTe multiple quantum wells. Lee, D.; Zucker, J.E.; Johnson, A.M.; Feldman, R.D.; Austin, R.F. // Applied Physics Letters;7/1/1991, Vol. 59 Issue 1, p75 

    Examines the Raman scattering resonant with excitons in cadmium zinc telluride/zinc telluride multiple quantum wells. Evidence for strain-induced shift of the longitudinal optic phonon energy; Resonances at heavy hole exciton transition; Photoluminescence and excitation spectra of the quantum...

  • Resonant Raman scattering in GaAN/(AlGa)N single quantum wells. Behr, D.; Niebuhr, R. // Applied Physics Letters;1/20/1997, Vol. 70 Issue 3, p363 

    Evaluates the resonant Raman scattering by longitudinal optical phonons from gallium nitride/aluminum-gallium nitride (GaN/(AlGa)N) single quantum wells (QW). Applications in high-efficiency light emitting diodes and injection lasers; Use of subband gap excitation in recording the Raman...

  • Raman scattering by interface phonons in GaAs-AlAs multiple-quantum-well structures: Correlation between Raman and high-resolution electron microscopy results. Tsen, K. T.; Smith, David J.; Tsen, S.-C. Y.; Kumar, Nathan S.; Morkoc, H. // Journal of Applied Physics;7/1/1991, Vol. 70 Issue 1, p418 

    Studies the effects of shallow impurity and interface roughness on resonant Raman scattering by interface phonons in multiple quantum-well structures. Samples and experimental techniques; Results and discussions; Conclusion.

  • Resonant micro-Raman investigations of the ZnSe-LO splitting in II-VI semiconductor quantum wires. Lermann, G.; Bischof, T. // Journal of Applied Physics;2/1/1997, Vol. 81 Issue 3, p1446 

    Reports on resonant micro-Raman spectroscopy studies on zinc selenide (ZnSe)Dc0.2Zn0.8Se quantum wires. Raman spectra as a function of wire width; Splitting of the ZnSe and ZnSe-like LO phonons; Partial strain relaxation.

  • Resonant Raman scattering in strained and relaxed InGaN/GaN multi-quantum wells. Lazic, S.; Moreno, M.; Calleja, J. M.; Trampert, A.; Ploog, K. H.; Naranjo, F. B.; Fernandez, S.; Calleja, E. // Applied Physics Letters;2/7/2005, Vol. 86 Issue 6, p061905 

    The effects of the composition and strain in InGaN/GaN multi-quantum wells on their phonon frequencies have been determined using resonant Raman scattering in a wide energy range. In pseudomorphic quantum wells a strong compensation of both effects occurs, resulting in the InGaN A1LO phonon...

  • Stress-relaxed growth of n-GaN epilayers. Ryu, J. H.; Katharria, Y. S.; Kim, H. Y.; Kim, H. K.; Ko, K. B.; Han, N.; Kang, J. H.; Park, Y. J.; Suh, E.-K.; Hong, C.-H. // Applied Physics Letters;4/30/2012, Vol. 100 Issue 18, p181904 

    A significant stress-relaxation was observed in GaN epilayers by integrating a heavily Si-doped GaN (n+-GaN) sacrificial layer in the undoped GaN templates grown on sapphire substrates by metal-organic chemical vapor deposition. Selective GaN growth and electrochemical etching were exploited to...

  • Effect of intermixing on bulk and interface Raman modes in GaAs:AlAs superlattice waveguide structures. Scrutton, P.; Fung, B.; Helmy, A. S. // Journal of Applied Physics;Oct2008, Vol. 104 Issue 7, p073103 

    Spatially resolved Raman spectroscopy at room temperature is used to study quantum well intermixing in GaAs:AlAs superlattice structures. Phonon modes are probed from the side facet along the [110] direction. The intermixing leads to the appearance of interfacial alloy modes and degraded the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics