Cooling of hot carriers in Ga0.47In0.53As

Lobentanzer, H.; Polland, H.-J.; Rühle, W. W.; Stolz, W.; Ploog, K.
August 1987
Applied Physics Letters;8/31/1987, Vol. 51 Issue 9, p673
Academic Journal
Carrier cooling is measured in an Al0.48In0.52As/Ga0.47In0.53As/InP heterostructure by time-resolved photoluminescence experiments for excitation densities between 5×1016 and 2.2×1018 cm-3. For low excitation density, the energy-loss rate by emission of optical phonons is close to theoretical bulk value, whereas a reduction of the energy-loss rate by a factor of 100 is found for the highest excitation density.


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