TITLE

Grain boundary segregation of oxygen and carbon in polycrystalline silicon

AUTHOR(S)
Pizzini, S.; Cagnoni, P.; Sandrinelli, A.; Anderle, M.; Canteri, R.
PUB. DATE
August 1987
SOURCE
Applied Physics Letters;8/31/1987, Vol. 51 Issue 9, p676
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The electrical activity of grain boundaries (GB’s) in polycrystalline silicon is strongly affected by heat treatments, which are known to induce the segregation of oxygen. The large, quantitative variations of the electrical activity of GB’s observed experimentally, which are a function not only of the heat treatments but also of the carbon and oxygen content of the specific sample examined, could not be explained however, without assuming that carbon and oxygen play a synergistic role. We demonstrate in this work, by using secondary ion mass spectrometry, that oxygen and carbon segregate simultaneously, albeit spatially resolved, at grain boundaries. This result appears to be of major importance when interpreting electron or light beam induced current profiles at grain boundaries in polycrystalline silicon.
ACCESSION #
9824042

 

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