Heterointerface stability in GaAs-on-Si grown by metalorganic chemical vapor deposition

Pearton, S. J.; Malm, D. L.; Heimbrook, L. A.; Kovalchick, J.; Abernathy, C. R.; Caruso, R.; Vernon, S. M.; Haven, V. E.
August 1987
Applied Physics Letters;8/31/1987, Vol. 51 Issue 9, p682
Academic Journal
The stability of the electrical and structural properties of GaAs directly deposited on Si by metalorganic chemical vapor deposition is examined. Extended annealing at 900 °C leads to substantial diffusion of Si across the heterointerface while under the same conditions there is no significant motion of Si incorporated as a dopant into the GaAs surface region. The degree of enhancement of Si diffusion ranges from a factor of ∼250 for 0.5-μm-thick GaAs films to ∼5 for 4-μm-thick films. The annealing time and GaAs layer thickness dependence of Si diffusivity near the interface is consistent with a defect-modulated mechanism. A large fraction of this mobile Si is electrically inactive.


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