Room-temperature continuous operation of p-n AlxGa1-xAs-GaAs quantum well heterostructure lasers grown on Si

Deppe, D. G.; Holonyak, N.; Nam, D. W.; Hsieh, K. C.; Jackson, G. S.; Matyi, R. J.; Shichijo, H.; Epler, J. E.; Chung, H. F.
August 1987
Applied Physics Letters;8/31/1987, Vol. 51 Issue 9, p637
Academic Journal
We describe the construction and room-temperature (300 K) continuous (cw) operation of p-n diode AlxGa1-xAs-GaAs quantum well heterostructure (QWH) lasers grown on Si substrates. The QWH crystal is grown in two stages, the first part by molecular beam epitaxy (MBE) and the single-well quantum well active region by metalorganic chemical vapor deposition (MOCVD). Simple gain-guided stripe configuration lasers fabricated on the MBE MOCVD QWH wafer operate cw at 300 K and have pulsed thresholds as low as 1.8×103 A/cm2.


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