TITLE

Device quality growth and characterization of (110) GaAs grown by molecular beam epitaxy

AUTHOR(S)
Allen, L. T. P.; Weber, E. R.; Washburn, J.; Pao, Y. C.
PUB. DATE
August 1987
SOURCE
Applied Physics Letters;8/31/1987, Vol. 51 Issue 9, p670
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Device quality (110)GaAs has been reproducibly grown by molecular beam epitaxy (MBE) for the first time. Angling of the substrate to expose stable, Ga-rich ledges on the (110) surface has been shown to be the necessary condition for two-dimensional growth. The layers exhibit a room-temperature electron mobility of ∼5700 cm2/V s for NSi∼4×1015 and a strong exciton photoluminescence emission at 4 K. This breakthrough in MBE growth of III-V compounds allows for fabrication of (110) GaAs devices which will take advantage of the unique properties of this orientation.
ACCESSION #
9824010

 

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