TITLE

Resonant Zener tunneling of electrons between valence-band and conduction-band quantum wells

AUTHOR(S)
Allam, Jeremy; Beltram, Fabio; Capasso, Federico; Cho, Alfred Y.
PUB. DATE
August 1987
SOURCE
Applied Physics Letters;8/24/1987, Vol. 51 Issue 8, p575
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the observation of resonant tunneling effects at high applied fields in the reverse-bias current-voltage characteristic of multiple quantum well p-i-n diodes. The Al0.48In0.52As/Ga0.47In0.53As structure (grown by molecular beam epitaxy with 35 periods of 139 Ã… barriers and 139 Ã… wells) shows two steps in the dark current. These are associated with Zener tunneling of electrons across the band gap from the lowest subband in the valence-band quantum wells to the first and second subbands of adjacent conduction-band wells.
ACCESSION #
9823990

 

Related Articles

  • Quantum transport calculation of the small-signal response of a resonant tunneling diode. Frensley, William R. // Applied Physics Letters;8/10/1987, Vol. 51 Issue 6, p448 

    The linear and lowest order nonlinear response of a quantum well resonant tunneling diode is evaluated using quantum transport theory. The calculations show that the negative conductance persists up to about 5 THz, although parasitic circuit elements will limit the maximum oscillation frequency...

  • Suppression of thermal broadening via Zener tunneling in narrow-gap semiconductor double-quantum-wire structures. Kyriakou, Ioanna; Jefferson, John H.; Lambert, Colin J. // Applied Physics Letters;6/7/2010, Vol. 96 Issue 23, p232104 

    Zener interband tunneling through a potential profile induced by two top gates in the plane of the two-dimensional electron gas (2DEG) of a doped narrow-gap quantum well system is studied when the gates are biased differently. In contrast to the case of resonant transport through a potential...

  • Room-temperature observation of resonant tunneling through an AlGaAs/GaAs quasiparabolic quantum well grown by molecular beam epitaxy. Chou, S. Y.; Harris, J. S. // Applied Physics Letters;4/25/1988, Vol. 52 Issue 17, p1422 

    We report the first room-temperature observation of resonant tunneling through a double-barrier diode with a 31.5-nm-wide AlGaAs/GaAs quasiparabolic quantum well grown by molecular beam epitaxy. As the bias voltage is scanned from 0 to 4 V, 11 resonant tunneling transitions are observed at room...

  • Sequential tunneling in GaAs/AlGaAs multiquantum well structures grown by molecular beam epitaxy. Han, Z. Y.; Yoon, S. F.; Radhakrishnan, K. // Journal of Applied Physics;9/1/1994, Vol. 76 Issue 5, p2868 

    Deals with a study which examined the sequential tunneling of electrons through Schottky diodes with gallium arsenide/aluminum gallium arsenide multiple quantum wells (MQW). Observations on two series of tunneling structures; Oscillations in the conductance; Discussion of the electron tunneling...

  • Planar native-oxide Al[sub x]Ga[sub 1 - x]As-GaAs quantum well heterostructure ring laser diodes. Kish, F.A.; Caracci, S.J. // Applied Physics Letters;3/30/1992, Vol. 60 Issue 13, p1582 

    Describes native-oxide planar Al[sub x]Ga[sub 1-x]As-gallium arsenide quantum well heterostructure ring laser diodes. Formation of curved cavities by native oxidation of entire upper confining layer of annulus; Role of photon confinements in laser oscillation; Properties of half-ring laser...

  • Measurement and calculation of gain spectra for (GaIn)As/(AlGa)As single quantum well lasers. Ellmers, C.; Girndt, A.; Hofmann, M.; Knorr, A.; Ru¨hle, W. W.; Jahnke, F.; Koch, S. W.; Hanke, C.; Korte, L.; Hoyler, C. // Applied Physics Letters;3/30/1998, Vol. 72 Issue 13 

    The gain spectrum of a (GaIn)As/(AlGa)As single-quantum-well laser diode is precisely measured at various currents in order to quantitatively check the predictions of a microscopic model. The theory includes carrier—carrier and carrier—LO-phonon collisions which lead to optical...

  • Diameter dependence of current-voltage characteristics of ultrasmall area AlSb-InAs resonant.... Nomoto, K.; Taira, K. // Applied Physics Letters;4/14/1997, Vol. 70 Issue 15, p2025 

    Investigates the current voltage characteristics of aluminum antimonide-indium arsenide resonant tunneling diodes (RTD). Diameters of diodes; Observation of resonant tunneling peaks at room temperature; Relation between peak-to-valley ratio and RTD diameter.

  • Resonant interband tunneling current in InAs/AlSb/GaSb/AlSb/InAs diodes with extremely thin AlSb.... Kitabayashi, H.; Waho, T. // Applied Physics Letters;7/28/1997, Vol. 71 Issue 4, p512 

    Investigates the effect of very thin aluminum antimonide barrier on resonant interband tunneling current in semiconductor double-barrier resonant interband tunneling diode. Appearance of negative differential resistance; Dependence of resonant tunneling current density on barrier thickness;...

  • Tunneling Spectroscopy of Localized States near the Quantum Hall Edge. Alekseev, A.; Cheianov, V.; Dmitriev, A. P.; Kachorovskiı, V. Yu. // JETP Letters;9/25/2000, Vol. 72 Issue 6, p333 

    In this paper, we discuss the experimental results of M. Grayson etal. on tunneling I–V characteristics of the quantum Hall edge. We suggest a two-step tunneling mechanism involving localized electron states near the edge, which might account for the discrepancy between the experimental...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics