Layer interdiffusion in Se-doped AlxGa1-xAs-GaAs superlattices

Deppe, D. G.; Holonyak, N.; Hsieh, K. C.; Gavrilovic, P.; Stutius, W.; Williams, J.
August 1987
Applied Physics Letters;8/24/1987, Vol. 51 Issue 8, p581
Academic Journal
Transmission electron microscopy and carrier concentration measurements are used to characterize the layer interdiffusion (Al-Ga interdiffusion) mechanism of a Se-doped AlxGa1-xAs-GaAs superlattice (SL) under high-temperature annealing. By varying the annealing environment and comparing the results with similarly annealed undoped SL’s and Mg-doped SL’s, we find that the layer interdiffusion occurs through interaction of the Se impurity with native defects associated with As-rich conditions, the most likely of which is the column III vacancy.


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