Optical time-of-flight measurement of carrier diffusion and trapping in an InGaAs/InP heterostructure

Westland, D. J.; Mihailovic, D.; Ryan, J. F.; Scott, M. D.
August 1987
Applied Physics Letters;8/24/1987, Vol. 51 Issue 8, p590
Academic Journal
We have measured the diffusion and trapping of photoexcited hot carriers in an InGaAs/InP heterostructure using an optical time-of-fight technique with picosecond time resolution. The ambipolar diffusivity is found to decrease by an order of magnitude between 4 K and room temperature, and the efficiency of trapping of carriers into the well increases rapidly in the same temperature range. A mean trapping time of 4 ps is measured for a 50 Ã… well.


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