TITLE

Hydrogen passivation of C acceptors in high-purity GaAs

AUTHOR(S)
Pan, N.; Bose, S. S.; Kim, M. H.; Stillman, G. E.; Chambers, F.; Devane, G.; Ito, C. R.; Feng, M.
PUB. DATE
August 1987
SOURCE
Applied Physics Letters;8/24/1987, Vol. 51 Issue 8, p596
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The effects of hydrogenation in high-purity p-type GaAs grown by molecular beam epitaxy and metalorganic chemical vapor deposition have been investigated by low-temperature photoluminescence and Hall-effect measurements. Before hydrogenation, photoluminescence measurements showed the dominant acceptor in the original samples was C, while after hydrogenation, the concentration of electrically active C acceptors was significantly reduced and the samples were highly resistive. These electrical and spectroscopic results show that C acceptors in GaAs can be passivated by hydrogenation.
ACCESSION #
9823975

 

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