Photoluminescence microscopy of epitaxial GaAs on Si

Gourley, P. L.; Longerbone, M.; Zhang, S. L.; Morkoç, H.
August 1987
Applied Physics Letters;8/24/1987, Vol. 51 Issue 8, p599
Academic Journal
We report microscopic photoluminescence images and corresponding spectra of epitaxial GaAs on Si substrates, prepared by molecular beam epitaxy. High magnification (3000×) images directly reveal dislocations present in the epilayer. Several substrate orientations are investigated including nominal (001) tilted 4° toward <110>. The GaAs samples include structures grown with and without superlattice buffer layers. Some samples were annealed at several temperatures from 650 to 850 °C. The dislocation density versus depth is studied by varying the optical probe wavelength and by studying samples that had been beveled and etched. In addition, the images and spectra are studied over a wide temperature range.


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