TITLE

Reduction of interfacial tunnel defects in silicon due to chemical vapor deposition of tungsten

AUTHOR(S)
De Blasi, J. M.; Delfino, M.; Sadana, D. K.; Ritz, K. N.; Norcott, M. H.
PUB. DATE
August 1987
SOURCE
Applied Physics Letters;8/24/1987, Vol. 51 Issue 8, p602
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A method is reported for reducing tunnel formation in p+-n Si, and a correlation is shown between tunnel defects and junction leakage. 11B+-implanted Si annealed for 30 min at 900 °C in N2 and subsequently deposited with W forms a high density of filamentary tunnel defects extending on the order of 0.1 μm from the W/Si interface. Reverse-bias leakage of 0.33-μm-deep junctions is -90 nA/cm2 at -5 V and the forward-bias ideality is 1.24 over eight decades of current. By contrast, for 11B+-implanted Si oxidized for 7 min in steam, tunnels if present are less than 0.01 μm in length. The reverse-bias leakage is -0.3 nA/cm2 at -5 V and the forward-bias ideality is 1.00. The 2×1019 cm-3 interfacial carrier concentration is the same for both deposits.
ACCESSION #
9823971

 

Related Articles

  • Detection of field-induced single-acceptor ionization in Si by single-hole-tunneling transistor. Burhanudin, Zainal A.; Nuryadi, Ratno; Tabe, Michiharu // Applied Physics Letters;7/23/2007, Vol. 91 Issue 4, p042103 

    The authors have detected the ionization of single-acceptors in the underlying p on p+ substrate of a silicon-on-insulator (SOI) wafer using a single-hole-tunneling (SHT) transistor fabricated in the top Si layer of the SOI at low temperatures. It was found that freeze-out boron atoms in the...

  • Hydrogenation of boron acceptor in silicon during electron injection by Fowler–Nordheim tunneling. Chao, Calvin Yi-Ping; Luo, Marie Shiang-Chyong; Pan, Samuel Cheng-Sheng; Sah, Chih-Tang // Applied Physics Letters;1/26/1987, Vol. 50 Issue 4, p180 

    Hydrogenation of the boron acceptor in silicon is observed during Fowler–Nordheim tunneling injection of electrons for the first time. Experiment is also presented which shows that the existence of free holes at the silicon surface is not important for boron hydrogenation.

  • On the Modification of a Silicon Surface Studied by Scanning Tunneling Microscopy. Kornilov, V. M.; Lachinov, A. N. // Semiconductors;Mar2003, Vol. 37 Issue 3, p307 

    The results of investigating the surface of Si with a thin oxide layer by scanning tunneling microscopy in air are reported. The tunneling current is shown to represent a superposition of several components. This circumstance makes it possible to suggest that a pseudoprofile is detected instead...

  • Current switching in bistable structures: heavily doped n[sup +]-polysilicon–tunnel-oxide layer–n-silicon. Osipov, V. Yu. // Physics of the Solid State;Mar97, Vol. 39 Issue 3, p402 

    Switching from a state with a steady-state nonequilibrium depletion and low current into the “on” state with a high current and low voltage drop on the structure is observed in highly doped n[sup +]-polysilicon–tunnel-oxide–n-silicon structures. The structures were...

  • Tunnel excess current in nondegenerate barrier (p–n and m–s) silicon-containing III–V structures. Evstropov, V. V.; Zhilyaev, Yu. V.; Dzhumaeva, M.; Nazarov, N. // Semiconductors;Feb97, Vol. 31 Issue 2, p115 

    Data are scaled from a study of the forward current in three types of barrier structure: p - n homostructures p - n-GaP/n-Si, p - n-GaAs - n-GaP/n-Si, and p - n-GaAs - n-GaAs/n-Si; heterostructures n-GaP/p-Si, p-GaP/n-Si, n-GaAsP/p-Si, and n-GaAs/p-Si; and Au-n-GaP/ n-Si surface-barrier...

  • Electron-induced 'localized atomic reaction' (LAR): Chlorobenzen adsorbed on Si(111) 7x7. Lu, P.H.; Polanyi, J.C.; Rogers, D. // Journal of Chemical Physics;12/8/1999, Vol. 111 Issue 22, p9905 

    Reports that electron-induced reaction of chlorobenzene adsorbed on silicon through scanning tunneling microscopy (STM) results in localized atomic reaction. Using an STM tip as source of electrons to localize the region of impact at adsorbate-covered surfaces.

  • Comparison of Si(111) surfaces prepared using aqueous solutions of NH[sub 4]F versus HF. Higashi, G.S.; Becker, R.S.; Chabal, Y.J.; Becker, A.J. // Applied Physics Letters;4/15/1991, Vol. 58 Issue 15, p1656 

    Studies the hydrogen-terminated silicon (111) surfaces obtained upon dissolution of the native oxide in HF and NH[sub4]F solutions, using vacuum scanning tunneling microscopy. Low energy electron diffraction; Achievement of electronic surface passivation even though the surface is atomically rough.

  • Fabrication of three-terminal resonant tunneling devices in silicon-based material. Zaslavsky, A.; Milkove, K.R. // Applied Physics Letters;3/28/1994, Vol. 64 Issue 13, p1699 

    Develops three-terminal resonant tunneling devices in silicon-based material. Isolation of the gate through a low-temperature oxide; Modulation of the resonant peak current by applying a moderate gate voltage; Demonstration of the pinch effect and operation of the devices.

  • Si/SiGe electron resonant tunneling diodes. Paul, D. J.; See, P.; Zozoulenko, I. V.; Berggren, K.-F.; Kabius, B.; Holla¨nder, B.; Mantl, S. // Applied Physics Letters;9/11/2000, Vol. 77 Issue 11 

    Resonant tunneling diodes have been fabricated using strained-Si wells and strained Si[sub 0.4]Ge[sub 0.6] barriers on a relaxed Si[sub 0.8]Ge[sub 0.2] n-type substrate, which demonstrate negative differential resistance at 298 K. Peak current densities of 5 kA/cm[sup 2] with peak-to-valley...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics