Reduction of interfacial tunnel defects in silicon due to chemical vapor deposition of tungsten

De Blasi, J. M.; Delfino, M.; Sadana, D. K.; Ritz, K. N.; Norcott, M. H.
August 1987
Applied Physics Letters;8/24/1987, Vol. 51 Issue 8, p602
Academic Journal
A method is reported for reducing tunnel formation in p+-n Si, and a correlation is shown between tunnel defects and junction leakage. 11B+-implanted Si annealed for 30 min at 900 °C in N2 and subsequently deposited with W forms a high density of filamentary tunnel defects extending on the order of 0.1 μm from the W/Si interface. Reverse-bias leakage of 0.33-μm-deep junctions is -90 nA/cm2 at -5 V and the forward-bias ideality is 1.24 over eight decades of current. By contrast, for 11B+-implanted Si oxidized for 7 min in steam, tunnels if present are less than 0.01 μm in length. The reverse-bias leakage is -0.3 nA/cm2 at -5 V and the forward-bias ideality is 1.00. The 2×1019 cm-3 interfacial carrier concentration is the same for both deposits.


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