TITLE

Low-threshold gain-guided coupled-stripe quantum well diode lasers by laser-assisted processing

AUTHOR(S)
Epler, J. E.; Burnham, R. D.; Paoli, T. L.
PUB. DATE
August 1987
SOURCE
Applied Physics Letters;8/24/1987, Vol. 51 Issue 8, p558
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The first coupled-stripe laser diodes fabricated by a laser-assisted process are reported. In this process, a focused laser beam is scanned across AlGaAs-GaAs heterostructure material to pattern a shallow resistive region in the GaAs cap layer. In this manner, the distribution of the injected current is patterned to fabricate gain-guided four-stripe diode lasers. The devices operate continuously (cw) at room temperature with a low threshold current (36 mA) and high differential quantum efficiency (80%). A maximum cw power efficiency of 48% is obtained at 350 mA. The gain-guided structure favors the lower order array modes, thus the far-field pattern is dominated by a central lobe.
ACCESSION #
9823951

 

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