Stable photoinduced paramagnetic defects in hydrogenated amorphous silicon nitride

Krick, David T.; Lenahan, P. M.; Kanicki, J.
August 1987
Applied Physics Letters;8/24/1987, Vol. 51 Issue 8, p608
Academic Journal
Room-temperature stable paramagnetic defects have been induced in hydrogenated amorphous silicon nitride films by exposure to sub-band-gap ultraviolet light. These defects are almost certainly trivalent silicon centers which can be completely annealed at temperatures higher than 250 °C. These defects seem similar in chemical origin to light-induced centers in hydrogenated amorphous silicon and defects in irradiated metal-oxide-semiconductor field-effect transistors.


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