Solid phase epitaxial regrowth of boron-doped polycrystalline silicon deposited by low-pressure chemical vapor deposition

Ghannam, M. Y.; Dutton, R. W.
August 1987
Applied Physics Letters;8/24/1987, Vol. 51 Issue 8, p611
Academic Journal
Solid phase epitaxial regrowth of polycrystalline silicon deposited on ‘‘oxide-free’’ (100) oriented single-crystal substrates and implanted with boron is investigated by means of secondary ion mass spectrometry, Rutherford backscattering channeling, and transmission electron microscopy. The effects of annealing ambients and heavy doping on the regrowth rate are also studied.


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