TITLE

Permeation of hydrogen into silicon during low-energy hydrogen ion beam bombardment

AUTHOR(S)
Horn, M. W.; Heddleson, J. M.; Fonash, S. J.
PUB. DATE
August 1987
SOURCE
Applied Physics Letters;8/17/1987, Vol. 51 Issue 7, p490
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this study we examine the permeating of hydrogen into p-type silicon during low-energy hydrogen ion beam bombardment by monitoring boron doping deactivation. This examination is done for various times and two different exposure temperatures. In addition we explore the effect of temperature during subsequent isochronal anneals on the recovery of silicon exposed to a hydrogen ion beam. As a result of these studies, it is found that there are two distinct permeation regions. Each may be characterized by its own apparent diffusion coefficient, activation energy, and recovery process.
ACCESSION #
9823917

 

Related Articles

  • Defects in a-Si:H films induced by Si ion implantation. Golikova, O. A. // Semiconductors;Apr99, Vol. 33 Issue 4, p447 

    Undoped a-Si:H films implanted with silicon ions (dose 10[sup 12]-10[sup 14]cm[sup -2], mean energy ε = 60 keV) at room temperature have been studied. The following results of the interaction of such films with ion beams have been established: formation of defects (dangling Si-Si bonds) in...

  • Optoelectronic properties of hydrogenated amorphous silicon films deposited under negative substrate bias. Roca i Cabarrocas, P.; Morin, P.; Chu, V.; Conde, J. P.; Liu, J. Z.; Park, H. R.; Wagner, S. // Journal of Applied Physics;3/1/1991, Vol. 69 Issue 5, p2942 

    Presents a study of the effects of ion bombardment on the optoelectronic properties of a-Si:H films. Density of states of a-Si:H films; Films with best electronic properties; Correlation of the saturated density of light-induced defects with the optical gap.

  • Passivation of ion-beam damage in metal-oxide-silicon structures by room-temperature hydrogenation. Kar, S.; Srikanth, K. // Applied Physics Letters;6/15/1992, Vol. 60 Issue 24, p3001 

    Investigates the efficacy of room-temperature hydrogenation in removing ion-beam-induced defects in metal-oxide-silicon (MOS) structures. Generation of defects by exposure of thermally oxidized silicon samples; Sensitivity of MOS structures to ion-beam damage; Use of Raman spectroscopy to...

  • Enhanced reflectivity of soft x-ray multilayer mirrors by reduction of Si atomic density. Schlatmann, R.; Keppel, A. // Applied Physics Letters;12/13/1993, Vol. 63 Issue 24, p3297 

    Examines the reflectivity of soft x-ray molybdenum/silicon multilayer mirrors by low energy hydrogen ion beam bombardment. Reduction of silicon atomic density; Increase of reflectivity coefficients in the soft x-ray range; Use of transmission electron microscopy and Rutherford backscattering...

  • Enhanced x-ray optical contrast of Mo/Si multilayers by H implantation of Si. Schlatmann, R.; Keppel, A.; Xue, Y.; Verhoeven, J.; Marée, C. H. M.; Habraken, F. H. P. M. // Journal of Applied Physics;8/15/1996, Vol. 80 Issue 4, p2121 

    Presents a study that investigated increased optical contrast of molybdenum/silicon (Si) multilayers through low energy hydrogen ion implantation of amorphous Si layers. Result of hydrogen implantation on silicon atomic density; Peak reflectivity of a few multilayers with reduced-density of Si...

  • Ion beam rehydrogenation and post-hydrogenation of a-Si:H. Tsuo, Y. S.; Deng, X. J.; Smith, E. B.; Xu, Y.; Deb, S. K. // Journal of Applied Physics;8/1/1988, Vol. 64 Issue 3, p1604 

    Presents a study which examined the rehydrogenation and post-hydrogenation of hydrogenated amorphous silicon using a Kaufman ion beam source. Experimental details; Information on the Kaufman ion beam source; Conclusion.

  • Ion bombardment measurements and simulations of a low temperature VHF PECVD SiH4-H2 discharge in the a-Si:H to μc-Si:H transition regime. Landheer, Kees; Goedheer, Wim J.; Poulios, Ioannis; Schropp, Ruud E. I.; Rath, Jatindra K. // Physica Status Solidi. A: Applications & Materials Science;Jul2016, Vol. 213 Issue 7, p1680 

    We studied ion bombardment during amorphous silicon layer deposition for hydrogen dilutions 5 to 59 with mass resolved IED measurements and simulations. The trends in the peak position of H2+ and SiH y+ IEDs with increasing hydrogen dilution show good agreement between measurements and...

  • Investigation of plasma hydrogenation and trapping mechanism for layer transfer. Peng Chen; Chu, Paul K.; Höchbauer, T.; Lee, J.-K.; Nastasi, M.; Buca, D.; Mantl, S.; Loo, R.; Caymax, M.; Alford, T.; Mayer, J. W.; Theodore, N. David; Cai, M.; Schmidt, B.; Lau, S. S. // Applied Physics Letters;1/17/2005, Vol. 86 Issue 3, p031904 

    Hydrogen ion implantation is conventionally used to initiate the transfer of Si thin layers onto Si wafers coated with thermal oxide. In this work, we studied the feasibility of using plasma hydrogenation to replace high dose H implantation for layer transfer. Boron ion implantation was used to...

  • Argon sputtering analysis of the growing surface of hydrogenated amorphous silicon films. Lin, Guang Hai; Doyle, James R.; He, Muzhi; Gallagher, Alan // Journal of Applied Physics;7/1/1988, Vol. 64 Issue 1, p188 

    Presents a study that reported mass spectrometric measurements of hydrogen and silicon-bearing neutral molecules sputtered from a hydrogenated amorphous silicon films. Discussion on the use of ion bombardment sputtering for depth profiling and surface analysis; Experimental detail;...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics