TITLE

Electrolyte electroreflectance of HgCdTe at low temperatures

AUTHOR(S)
Berlouis, L. E. A.; Peter, L. M.; Astles, M. G.; Humphreys, R. G.
PUB. DATE
August 1987
SOURCE
Applied Physics Letters;8/17/1987, Vol. 51 Issue 7, p502
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Electrolyte electroreflectance measurements in ethanol/lithium perchlorate solutions over the temperature range 300–156 K have been used to derive the temperature dependence of the E1 transition of Hg1-xCdxTe (x=0.23–0.36). The temperature coefficient dE1/dT derived by third derivative line-shape fitting (6.6±0.5×10-4 eV K-1) is considerably higher than values reported previously in the literature.
ACCESSION #
9823908

 

Related Articles

  • Electrolyte electroreflectance in the characterization of HgCdTe heterostructures. Berlouis, L. E. A.; Peter, L. M.; Astles, M. G.; Gough, J.; Humphreys, R. G.; Irvine, S. J. C.; Steward, V. // Journal of Applied Physics;12/1/1987, Vol. 62 Issue 11, p4518 

    Provides information on a study which examined the use of the electrolyte electroreflectance (EER) technique coupled with electrochemical etching to profile through epitaxial layers and heterostructures of Hg[sub1-x]Cd[subx]Te. Need for proper electrochemical control during EER measurements;...

  • An electroreflectance study of n- and p-type gallium arsenide in aqueous electrolytes. Batchelor, R. A.; Hamnett, A.; Peat, R.; Peter, L. M. // Journal of Applied Physics;7/1/1991, Vol. 70 Issue 1, p266 

    Presents a study that analyzed the variation in the space-charge voltage of gallium arsenide semiconductors in aqueous electrolytes based on the electroreflectance of the semiconductors. Background on electrolyte reflectance; Analysis of the electroreflectance of gallium arsenide in acidic and...

  • E1 electrolyte electroreflectance of GaAs modeled by Franz–Keldysh theory. Batchelor, R. A.; Hamnett, A. // Journal of Applied Physics;2/1/1992, Vol. 71 Issue 3, p1376 

    Presents a study which measured electrolyte electroreflectance spectra at the E[sub1] transition of gallium arsenide. Experimental methods; Modeling of E[sub1] electroreflectance spectra; Results and discussion.

  • dc and ac optical nulling bridges for sensitive transmittance measurements. Argueta-Díaz, V.; Trejo-Valdez, M.; García-Valenzuela, A. // Review of Scientific Instruments;Aug2000, Vol. 71 Issue 8 

    We present a formal comparison between dc and ac nulling optical bridges. We consider their performance in monitoring over long periods of time (several minutes), small and slow (in a time scale of seconds) changes in transmittance of an optical component. We consider two fundamentally different...

  • Single-beam integrating sphere spectrophotometer for reflectance andstransmittance measurements versus angle of incidence in the solar wavelength range on diffuse and specular samples Arne Roos, Per Nostell; Nostell, Per; Ronnow, Daniel; Roos, Arne // Review of Scientific Instruments;May99, Vol. 70 Issue 5, p2481 

    Examines a multipurpose instrument for the measurement of reflectance and transmittance versus angle of incidence for specular and diffuse samples in the solar wavelength range. Operation mechanism; Integrating spheres used for diffuse transmittance and reflectance measurements; Number of setups.

  • Field inhomogeneity effects on photoreflectance spectra of ZnSe/GaAs. Song, J. H.; Sim, E. D. // Journal of Applied Physics;4/15/2000, Vol. 87 Issue 8, p3789 

    Provides information on a study which carried out photoreflectance measurements from ZnSe epilayers of different thickness. Experimental details; Results and discussions.

  • Novel counter electrodes based on NiP-plated glass and Ti plate substrate for dye-sensitized solar cells. Guiqiang Wang; Yuan Lin // Journal of Materials Science;Jul2007, Vol. 42 Issue 13, p5281 

    Novel counter electrodes based on NiP-plated glass and Ti plate substrate were prepared by thermal decomposition of H2PtCl6. Their properties and application in dye-sensitized solar cells were investigated. Platinized Ti plate electrode (Pt/TP electrode) and platinized NiP-plated glass electrode...

  • Optical and electrochemical properties of CuInSe2 and CuInS2-CuInSe2 alloys. Neff, H.; Lange, P.; Fearheiley, M. L.; Bachmann, K. J. // Applied Physics Letters;11/15/1985, Vol. 47 Issue 10, p1089 

    The fundamental optical transitions in single crystals of CuInS2xSe2-2x alloys have been studied by electrolyte electroreflectance (EER) spectroscopy. The band gap of the alloys increases nonlinearly with increasing sulphur content corresponding to a bowing parameter 0.14. The flatband potential...

  • Study of CuInS2 grown by the traveling-heater method by electrolyte electroreflectance. Hsu, T. M. // Journal of Applied Physics;4/1/1986, Vol. 59 Issue 7, p2538 

    Presents a study which investigated the electrolyte electroreflectance spectra of copper indium sulphide grown by the travelling-heater method. Measurement of the composition of copper indium sulphide; Experimental results of energy gaps; Conclusion.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics