TITLE

Dependence of the AlxGa1-xAs band edge on alloy composition based on the absolute measurement of x

AUTHOR(S)
Kuech, T. F.; Wolford, D. J.; Potemski, R.; Bradley, J. A.; Kelleher, K. H.; Yan, D.; Farrell, J. Paul; Lesser, P. M. S.; Pollak, F. H.
PUB. DATE
August 1987
SOURCE
Applied Physics Letters;8/17/1987, Vol. 51 Issue 7, p505
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The absolute determination of the Al concentration, x, in epitaxial layers of AlxGa1-xAs was carried out using a nuclear reaction technique. This technique utilizes the narrow resonances found in the 27Al( p,γ)Si28 reaction, together with Rutherford backscattering measurements, to obtain accurate values of the alloy composition. The AlxGa1-xAs band edge was measured on these samples through low-temperature photoluminescence (2 K) measurements. An improved value of the direct edge (Γ) on composition was determined to be EΓg =1.512 +1.455x(eV) within a ±0.3% limit. The direct-to-indirect transition was found to occur at an Al concentration of x[bar_over_tilde:_approx._equal_to]0.37±0.015, lower than previously reported for He temperatures.
ACCESSION #
9823905

 

Related Articles

  • Single-crystal magnetic metal films on GaAs grown by electrodeposition. Hart, R.; Midgley, P.A. // Applied Physics Letters;8/28/1995, Vol. 67 Issue 9, p1316 

    Describes the electrodeposition of single crystal magnetic metal films on gallium arsenide semiconductor. Epitaxial relationship between nickel-copper alloy and gallium arsenide; Structural analysis of the alloy by electron backscattering diffraction; Properties of magnetic film and substrate...

  • Thermal conversion of AlxGa1-xAs layers grown by molecular beam epitaxy. Adachi, Sadao; Yamahata, Shoji // Applied Physics Letters;10/19/1987, Vol. 51 Issue 16, p1265 

    We report the observation of thermal conversion of AlxGa1-xAs alloys grown by molecular beam epitaxy (MBE) from undoped, high-resistivity AlxGa1-xAs to low-resistivity, p-type material after annealing beyond the growth temperature (∼650 °C). The phenomenon occurs only in the...

  • Cathodoluminescence measurement of an orientation dependent aluminum concentration in AlxGa1-xAs epilayers grown by molecular beam epitaxy on a nonplanar substrate. Hoenk, Michael E.; Chen, Howard Z.; Yariv, Amnon; Morkoç, Hadis; Vahala, Kerry J. // Applied Physics Letters;4/3/1989, Vol. 54 Issue 14, p1347 

    Cathodoluminescence scanning electron microscopy is used to study AlxGa1-x As epilayers grown on a nonplanar substrate by molecular beam epitaxy. Grooves parallel to the [011] direction were etched in an undoped GaAs substrate. Growth on such grooves proceeds on particular facet planes. We find...

  • Epitaxial Al Schottky contacts formed on (111) GaAs. Ueno, Kazuyoshi; Yoshida, Takayoshi; Hirose, Kazuyuki // Applied Physics Letters;5/28/1990, Vol. 56 Issue 22, p2204 

    Epitaxial (111)A1/(111)GaAs Schottky contacts are formed using molecular beam epitaxy. The epitaxial relationship is determined by transmission electron microscopy. The interface is found to be abrupt and of an atomic order. Schottky barrier heights are measured by current-voltage and...

  • GaSb0.5As0.5/Al0.35Ga0.65Sb0.48As0.52 superlattice lattice matched to InP prepared by molecular beam epitaxy. Tsang, W. T.; Chiu, T. H.; Chu, S. N. G.; Ditzenberger, J. A. // Applied Physics Letters;4/1/1985, Vol. 46 Issue 7, p659 

    We have shown, against conventional belief, for the first time that high quality GaSb0.5As0.5/Al0.35Ga0.65Sb0.48As0.52 superlattices lattice matched to InP substrate can be grown by molecular beam epitaxy in spite of the existence of extensive miscibility gap in this material system. The...

  • MOVPE of structures with aluminum nanocluster layers in a GaAs matrix. Vostokov, N. V.; Danil'tsev, V.; Drozdov, Yu. N.; Pryakhin, D. A.; Shashkin, V. I.; Shuleshova, I. Yu. // Technical Physics Letters;May2007, Vol. 33 Issue 5, p444 

    Metalorganic vapor phase epitaxy (MOVPE) was used to grow semiconductor structures comprising a GaAs single crystal matrix with incorporated layers of aluminum nanoclusters (Al-NCs). A new regime of GaAs overgrowth on Al-NC layers is proposed, which ensures planarization of the semiconductor...

  • Ion channeling, high resolution x-ray diffraction and Raman spectroscopy in strained quantum wells. Siddiqui, Azher M.; Rao, S. V. S. Nageswara; Pathak, Anand P.; Kulkarni, V. N.; Murthy, R. Keshav; Williams, Eric; Ila, Daryush; Muntele, Claudiu; Chandrasekaran, K. S.; Arora, B. M. // Journal of Applied Physics;9/15/2001, Vol. 90 Issue 6 

    InGaAs strained epitaxial layers on GaAs are of considerable interest in semiconductor devices. An important feature is the critical thickness of the epitaxial layer beyond which relaxation occurs, affecting the device performance. With this in view, a series of such structures have been grown...

  • Atomic layer epitaxy of GaAs using nitrogen carrier gas. Yokoyama, Haruki; Shinohara, Masanori; Inoue, Naohisa // Applied Physics Letters;10/21/1991, Vol. 59 Issue 17, p2148 

    Examines the atomic layer epitaxy of gallium arsenide using nitrogen carrier gas. Comparison with the temperature range of hydrogen carrier gas; Effect of nitrogen carrier gas on trimethylgallium decomposition; Use of surface profiler for layer thickness measurement.

  • Stepwise monolayer growth of GaAs by switched laser metalorganic vapor phase epitaxy. Doi, Atsutoshi; Aoyagi, Yoshinobu; Namba, Susumu // Applied Physics Letters;9/29/1986, Vol. 49 Issue 13, p785 

    Growth of GaAs by repeated deposition of single atomic layers using the switched laser metalorganic vapor phase epitaxy technique is reported. Suspension of Ga deposition at 100% coverage is an essential part of the growth mechanism for stepwise epitaxy—the ideal atomic layer epitaxy....

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics