TITLE

Temperature-dependent damage production in ion-implanted strained-layer superlattices

AUTHOR(S)
Myers, D. R.; Arnold, G. W.; Dawson, L. R.; Biefeld, R. M.; Hills, C. R.; Doyle, B. L.
PUB. DATE
August 1987
SOURCE
Applied Physics Letters;8/17/1987, Vol. 51 Issue 7, p517
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have characterized damage production in both (InGa)As/GaAs and Ga(AsP)/GaP strained-layer superlattices (SLS’s) for fluences sufficient to induce compositional disordering at three different implant temperatures. Dramatically different implant temperatures are required to produce similar defect distributions between the two SLS systems. Implants at lower temperatures [80 K for the (InGa)As/GaAs system, 300 K and below for the Ga(AsP)/GaP system] exhibit amorphous zones at depths consistent with the predictions of ion range codes; while implants at elevated temperatures [25 °C in (InGa)As/GaAs, 400 °C in the Ga(AsP)/GaP system] exhibit greatly reduced damage levels characterized mainly by extended defects.
ACCESSION #
9823897

 

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