Formation of the interface between GaAs and Si: Implications for GaAs-on-Si heteroepitaxy

Bringans, R. D.; Olmstead, Marjorie A.; Uhrberg, R. I. G.; Bachrach, R. Z.
August 1987
Applied Physics Letters;8/17/1987, Vol. 51 Issue 7, p523
Academic Journal
Results of photoemission core-level spectroscopy measurements for coverages of around one monolayer of As, Ga, and GaAs on Si substrates are presented. The interfaces were formed on on-axis Si(100) and Si(111) substrates using molecular beam epitaxy techniques. The bonding between As and the substrate surface leaves the As atoms fully coordinated and thus extremely unreactive. This causes the GaAs films to form islands at average coverages of less than one monolayer. The surface between the islands is found to be terminated by a single atomic layer of As. Use of a Ga predeposition technique shows evidence of decreasing the area between islands. Results for As interaction with stepped Si(100) surfaces and the implications for avoidance of antiphase domain boundaries are discussed.


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