Molecular stream epitaxy of ultrathin InGaAs/GaAsP superlattices

Katsuyama, T.; Tischler, M. A.; Karam, N. H.; El-Masry, N.; Bedair, S. M.
August 1987
Applied Physics Letters;8/17/1987, Vol. 51 Issue 7, p529
Academic Journal
Molecular stream epitaxy allows several molecular beam epitaxy (MBE) concepts to take place in a metalorganic chemical vapor deposition reactor. In this technique, the growth of InGaAs/GaAsP superlattices proceeds by rotating the substrate between two gas streams, one containing trimethylgallium (TMG), triethylindium, and AsH3 and the other containing TMG, PH3, and AsH3. This technique eliminates gas flow transients and provides a method to mechanically shear off the gaseous boundary layer between successive exposures. Ultrathin strained-layer superlattices (SLS’s) with 8-Å-thick films have been obtained. The optical properties of these SLS’s are comparable to those obtained for equivalent superlattices by gas source MBE.


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