Deconvolution of the infrared absorption peak of the vibrational stretching mode of silicon dioxide: Evidence for structural order?

Boyd, Ian W.
August 1987
Applied Physics Letters;8/10/1987, Vol. 51 Issue 6, p418
Academic Journal
It is found that the characteristic infrared spectra of thermally grown silicon dioxide in the 1075 cm-1 region for films in the thickness range 28–450 Å mathematically deconvolute consistently into two distinctly separate Gaussian profiles. The derived peaks are found around 1050 cm-1 with a full width at half-maximum transmission value (FWHM) of 65 cm-1, and near 1085 cm-1 with a FWHM of 35 cm-1. The relative band areas of these two features are consistently found to be approximately 0.76 and 0.24, respectively. These observations could be supportive of at least two structural models of amorphous silicon dioxide disclaiming the generally accepted continuous random network arrangement.


Related Articles

  • Influence of microstructure on the Urbach edge of amorphous SiC:H and amorphous SiGe:H alloys. Mahan, A. H.; Menna, P.; Tsu, R. // Applied Physics Letters;10/12/1987, Vol. 51 Issue 15, p1167 

    Infrared measurements have been used as a means of quantifying the amount of hydrogenated amorphous silicon and amorphous silicon alloy microstructure. Using a parameter obtained from these infrared measurements, the Urbach edge of amorphous silicon (a-Si:H), amorphous silicon carbon (a-SiC:H),...

  • Synthesis of Amorphous SiO[sub x] Nanostructures. Lao, J. Y.; Wen, J. G.; Wang, D. Z.; Ren, Z. F. // International Journal of Nanoscience;Apr2002, Vol. 1 Issue 2, p149 

    Various amorphous SiO[sub x] nanotube structures nucleated by GeO[sub x] nanoparticles were synthesized by thermal evaporation method. The presence of Ge does not only nucleate the growth of the SiO[sub x] nanomaterials, but also dopes them. The nanostructure morphology is affected by the...

  • Photochemical hole-burning study of 1,4-dihydroxyanthraquinone doped in amorphous silica prepared by alcoholate method. Tani, Toshiro; Namikawa, Hiroshi; Arai, Kazuo; Makishima, Akio // Journal of Applied Physics;11/1/1985, Vol. 58 Issue 9, p3559 

    Presents information on a study that reported preparation of amorphous silica doped with organic dye molecules, 1-4 dihydroxyanthraquinone, and the observation of the amorphous structure of the system. Experiment details; Results and discussion.

  • X-ray induced luminescence of high-purity, amorphos silicon dioxide. Miller, A. J.; Leisure, R. G. // Journal of Applied Physics;8/15/1999, Vol. 86 Issue 4, p2042 

    Presents information on a comprehensive study of the optical luminescence of amorphous silica (a-SiO2) over a wide dose range. Experimental details; Results; Discussion; Conclusions.

  • Crystallization of implanted amorphous silicon during millisecond annealing by infrared laser irradiation. Mannino, Giovanni; Spinella, Corrado; Ruggeri, Rosa; La Magna, Antonino; Fisicaro, Giuseppe; Fazio, Enza; Neri, Fortunato; Privitera, Vittorio // Applied Physics Letters;7/12/2010, Vol. 97 Issue 2, p022107 

    We investigated the homogenous nucleation of crystalline grains in amorphous Si during transient temperature pulse of few milliseconds IR laser irradiation. The crystallized volume fraction is ∼80%. Significant crystallization occurs in nonsteady regime because of the rapid temperature...

  • Two characteristic photoluminescence states and their metastability in hydrogenated amorphous silicon and its alloys. Oheda, Hidetoshi // Journal of Applied Physics;3/1/2007, Vol. 101 Issue 5, p053711 

    Photoluminescence (PL) lifetime distributions, G(τ), in hydrogenated amorphous silicon (a-Si:H) and its alloys are studied by frequency resolved spectroscopy. Two lifetime components, which are characterized with respective specific peak lifetimes of about 1 ms and 10 μs, are commonly...

  • Identification of infrared absorption peaks of amorphous silicon carbon hydrogen alloy prepared using ethylene. Chen, Jhy-Hong; Sah, Wen-Jyh; Lee, Si-Chen // Journal of Applied Physics;7/1/1991, Vol. 70 Issue 1, p125 

    Presents a study which identified infrared absorption peaks of amosphous silicon carbon hydorgen alloy prepared using ethylene. Method of the study; Results and discussion; Conclusion.

  • The Optical Properties and Quantum-Size Effects in the Amorphous Hydrogenized a-C:H/a-Si:H Diamond-Like Films. Babaev, A. A.; Abdulvagabov, M. Sh.; Gabibov, F. S. // International Journal of Modern Physics B: Condensed Matter Phys;3/20/2002, Vol. 16 Issue 6/7, p912 

    It is studied the absorption edge and photoluminescence (4.2-900 K) in the a-C:H films on silica substrates prepared by the decomposition of 10%CH[sub 4]+90%Ar gas mixture in the RF plasma under various growth conditions E/p (E — electric field strength, p — gas mixture pressure)....

  • Effects of charge transfer on a-SiO[sub 2] surface structure: A molecular dynamics study. Wang, Cheng; Kuzuu, Nobu; Tamai, Yoshimori // Journal of Applied Physics;10/15/2002, Vol. 92 Issue 8, p4408 

    The effects of charge transfer between atoms on an amorphous SiO[SUB2] surface were studied by comparing a model with fixed charge (FQ) and a model that takes into consideration charge transfer by the charge equilibration (QEq) method. The QEq surface has more oxygen atoms and denser structures...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics